Ⅰ. Yiziphi izimo zokusetshenziswa kwemikhiqizo ye-silicon carbide ceramic?

I-Silicon carbide (SiC) ceramics isetshenziswa kabanzi ezingxenyeni eziyinhloko zemishini yenqubo ebalulekile ezimbonini ze-semiconductor kanye ne-photovoltaic ngenxa yokumelana nokushisa okuphezulu kakhulu, ukumelana nokugqwala, ukushisa okuphezulu kwe-thermal kanye ne-coefficient ephansi yokwandisa ukushisa. Okulandelayo yizimo zohlelo lokusebenza zemikhiqizo ejwayelekile:

Isikebhe se-silicon carbide

umsebenzi:

I-SiC Boat ivamise ukusetshenziselwa ukuphatha ama-wafers (njengama-silicon wafers noma ama-silicon carbide wafers) ukuze adluliselwe futhi abekwe ezinqubweni zokushisa okuphezulu.

Izimo zohlelo lokusebenza:

Inkambu yokucubungula i-semiconductor: Ezithandweni zokusabalalisa kanye ne-oxidation, isikebhe sidinga ukusebenza ngokuzinza isikhathi eside endaweni yokushisa ephezulu engaphezu kuka-1000°C ukuze sigweme ukuguquguquka noma ukungcoliswa kwe-wafer ngenxa yengcindezi yokushisa.

Imboni ye-Photovoltaic: Emishinini ye-PECVD (i-plasma ethuthukisiwe ye-chemical vapor deposition), isikebhe sisetshenziselwa ukusekela ama-wafers e-silicon ukuze kufakwe ifilimu ye-silicon nitride ephikisana ne-reflection, futhi idinga ukumelana nokuqhuma kwamabhomu e-plasma ephezulu kanye nendawo yokushisa ephezulu.

Ishubhu ye-silicon carbide furnace (SiC Reaction Tube)

Umsebenzi: Njengengxenye eyinhloko yegumbi lokuphendula izinga lokushisa eliphezulu, inikeza inkambu yokushisa efanayo kanye nemvelo engasebenzi ngamakhemikhali.

Izimo zohlelo lokusebenza:

Imboni ye-semiconductor: Esithandweni se-oxidation, ishubhu lesithando somlilo sidinga ukuhlala isikhathi eside zizinzile endaweni yomoya-mpilo noma umhwamuko wamanzi ukuze kugwenywe ukukhishwa kokungcola ngenxa ye-oxidation noma ukugqwala.

Imboni ye-Photovoltaic: Esithandweni sokusabalalisa, ishubhu lomlilo lisetshenziselwa inqubo yokusabalalisa i-phosphorus (njengokulungiswa kwamaseli e-PERC), futhi kuyadingeka ukumelana nokugqwala kwegesi ene-asidi emkhathini we-POCl₃.

I-Cantilever Paddle kanye nomnikazi wesikebhe

Umsebenzi: I-cantilever paddle isetshenziselwa ukudlulisa ngokuzenzakalelayo isikebhe se-crystal, futhi umnikazi wesikebhe usetshenziselwa ukulungisa indawo ye-crystal boat.

Izimo zohlelo lokusebenza:

Enqubweni ye-wafer ye-semiconductor, i-cantilever paddle idinga ukugcina amandla aphezulu omshini ngesikhathi sokuphakanyiswa okusheshayo nokwehliswa ukuze kugwenywe ukuphuka ngenxa yokukhathala okushisayo; umnikazi wesikebhe udinga ukugcina ukunemba kwejometri ekushiseni okuphezulu ukuvimbela ukuchezuka kwe-wafer.

Ⅱ. Yiziphi izikhombisi-ndlela zokusetshenziswa kwezinto ze-silicon carbide ezimbonini ze-photovoltaic kanye ne-semiconductor?

Ukusetshenziswa okuyisisekelo kwemikhiqizo ye-silicon carbide ceramic kugxilwe kuzixhumanisi zenqubo yezinhlobo ezimbili zemishini:

Izinkomba zokusebenza	I-graphite impahla	Izinto ze-silicon carbide
Ukuqina kwezinga lokushisa eliphezulu	Kulula ukwenza i-oxidize (>500°C idinga ukuvikeleka kokunamathela)	I-Anti-oxidation (ingamelana ne-1600°C oxidizing atmosphere isikhathi eside)
Ukungena kwamakhemikhali	Kulula ukugqwala ngamagesi ane-asidi (njenge-Cl₂, POCl₃)	Ukumelana nokugqwala kwe-Acid ne-alkali (kufaka phakathi imidiya eqinile edlayo efana ne-HF, HNO₃)
Ingozi yokungcoliswa kwezinhlayiya	Kulula ukukhiqiza ukungcoliswa kothuli, okuholela ekukhubazekeni kwe-wafer	Indawo eminyene, ayikho ingozi yokuchitheka kwezinhlayiyana
Amandla emishini	Kulula ukukhubazeka ekushiseni okuphezulu (i-coefficient yokwandisa ukushisa okuphezulu)	Ukuqina okuphezulu (ukuqina kwe-Mohs 9.2), ukumelana nokushaqeka okushisayo okuqinile
Ukuqhuba kwe-thermal	I-Anisotropy, ingozi enkulu yokushisa kwendawo	I-thermal conductivity ephezulu (120 W/m`K), inkambu yokushisa efanayo

Imboni ye-Photovoltaic

Isithando somlilo se-PECVD: sisetshenziselwa ukufaka amafilimu aphikisana ne-reflection (njenge-silicon nitride). Izingxenye ze-silicon carbide zidinga ukumelana nebhomu ye-ion okubangelwa ukukhishwa okukhanyayo endaweni ye-plasma engu-400 ~ 500 ° C, kuyilapho igwema ukungcoliswa kwefilimu.

Isithando somlilo sokusabalalisa: sisetshenziselwa ukusabalalisa kwe-phosphorus/boron ukuze kwakhiwe ama-PN junctions. Amashubhu e-silicon carbide furnace adinga ukumelana nokugqwala okuvela kumagesi e-POCl₃ noma e-BBr₃ ku-800~1000°C futhi aqinisekise ukufana kwe-doping.

Imboni ye-semiconductor

Isithando somlilo se-Diffusion kanye ne-oxidation furnace:

Isithando somlilo se-Diffusion: sisetshenziselwa inqubo yokudonsa ngemva kokufakwa kwe-ion. Izikebhe ze-silicon carbide crystal zidinga ukugwema ukukhipha ukungcola kwensimbi (okufana ne-Fe, Ni), ngaphandle kwalokho kuzodala ukuvuza kwe-wafer yamanje.

Isithando somlilo se-oxidation: khulisa izendlalelo ze-silicon dioxide endaweni yomoya-mpilo owomile noma ezindaweni ezinomoya-mpilo omanzi. Amashubhu e-silicon carbide furnace adinga ukugcina ukungena komoyampilo okuphansi ezingeni lokushisa eliphakeme elingu-1200°C ukuvimbela ukujiya kongqimba lwe-oxide olungalingani.

Ⅲ. Yiziphi izinzuzo ze-silicon carbide materials ngaphezu kwe-graphite?

Nakuba izinto ze-graphite zinezinzuzo zezindleko eziphansi nokucubungula kalula, ziphansi kakhulu kune-silicon carbide kulezi zakhiwo ezilandelayo ezibalulekile:

Ukuhlaziywa kwecala elithile:

Ngokwezibalo zangempela zokukhiqiza ze-Veteksemicon, esithandweni sokusabalalisa se-semiconductor, isikebhe se-graphite sidinga ukushintshwa njalo ngemva kwezinyanga ezi-3, kuyilapho isikebhe se-silicon carbide singahlala iminyaka engaphezu kwengu-2, futhi isivuno se-wafer sikhuphuka ngo-5% ~ 10%.

Ngokusho kwedatha yokukhiqiza enikezwe i-Semixlab, Kunqubo ye-photovoltaic PECVD, i-silicon carbide cantilever paddle ingakhuphula ukusebenza kahle kwebhethri ngo-2% ~ 5% ngenxa yokungabikho kokungcoliswa kwezinhlayiyana.

Ⅳ. kungani ukhetha i-Semixlab?

I-Semixlab ingumkhiqizi nomnikezeli ohamba phambili e-China osekuyiminyaka engu-20 egxile ocwaningweni lwe-graphite ne-SiC surface coatings. Ngemva kweminyaka yocwaningo nokuthuthukiswa kobuchwepheshe, inqubo yethu yokuhlanganisa i-SiC ingafinyelela ubumsulwa obungaphezu kuka-99.98%, futhi singakwazi nokwenza ngokwezifiso imikhiqizo ye-silicon carbide yobumsulwa nentengo ehlukene ngokwezimo zohlelo lwakho lokusebenza. Uma udinga umkhiqizo wokuhlanzeka okuphezulu, njengokuxhumana okuqondile nemikhiqizo ye-semiconductor wafer, singakuhlinzeka nge-CVD SiC coating, i-CVD TaC coating nezinye izinqubo ebusweni be-substrate impahla ukuze uhlangabezane nezidingo zakho eziqinile zobuchwepheshe.