I-CVD SiC Coated Graphite Susceptor ye-Epitaxy
I-Semixlab CVD SiC Coated Graphite Susceptor ye-Epitaxy yenziwe nge-graphite ehlanzekile kakhulu enobuso be-CVD SiC. Umklamo oyindilinga, onezinyathelo unikeza indawo echaziwe ye-wafer ngesikhathi sokukhula kwe-MOCVD. Ivame ukusetshenziswa kwi-epitaxy ye-GaN ne-GaAs, lapho ukuhlanzeka kobuso kanye nezimo zokushisa ezihambisanayo kubalulekile.
Incazelo
Izinzuzo Zomkhiqizo & Izici
● Indawo yokusebenza embozwe yi-SiC
Isendlalelo se-CVD SiC sakha ubuso obubheke inqubo ye-susceptor futhi sisiza ukuvikela i-graphite endaweni yenqubo ezungezile.
● Umzimba we-graphite ohlanzekile kakhulu
I-substrate ye-graphite inikeza impendulo yokushisa edingekayo kwi-epitaxy yokushisa okuphezulu futhi ingashintshwa ngomshini ukuze ifane nemiklamo ehlukene yemishini.
● Indawo ye-wafer evaliwe
Isakhiwo esinezitebhisi sinikeza i-wafer indawo yokuhlala eqinile, esiza ekugcineni indawo yayo ngesikhathi sokucubungula.
● Yenzelwe imishini ye-epitaxy
I-susceptor ingakhiqizwa ngamadayamitha ahlukene e-wafer, ubukhulu bephakethe kanye nokulungiswa kwemishini esetshenziswa ekukhiqizweni kwe-GaN kanye ne-GaAs.
Ukwenza ngokwezifiso, Ukuqinisekiswa Kwekhwalithi Nokusekelwa
Singakwazi ukukhiqiza umzimba we-graphite, iphakethe le-wafer kanye ne-CVD SiC coating ngokuya ngomdwebo wakho, usayizi we-wafer noma izidingo zemishini, ngokuhlolwa okwenziwe ngaphambi kokuthunyelwa; sithumelele imininingwane yakho yomdwebo noma yesicelo ukuze uthole ikhotheshini.
Imininingwane
Imininingwane kanye nezigaba zomkhiqizo
| Into | Ukucaciswa |
| Product | I-CVD SiC Coated Graphite Epitaxy Susceptor |
| Ibanga le-Graphite | I-Graphite Engacwengekile Ephezulu |
| I-Surface Coating | I-CVD SiC |
| Ukuqina Kokunamathela Okujwayelekile | 100 ± 20 μm |
| Ukuhlanzeka kwe-SiC | Kuze ku-99.99995% |
| Ukwakheka | Izinyathelo / Igobile |
| Izinqubo Ezijwayelekile | I-GaN kanye ne-GaAs Epitaxy, i-MOCVD |
| Usayizi we-Wafer | Kutholakala ngokwesidingo |
| Ubukhulu | Yenza ngokwezifiso |
Izicelo
I-susceptor isetshenziswa ezinhlelweni ze-MOCVD zokukhula kwe-epitaxial ye-GaN ne-GaAs, lapho i-wafer idinga ukwesekwa okuzinzile kuyo yonke inqubo yokufaka.
Izinhlelo zokusebenza ezijwayelekile zifaka phakathi i-compound semiconductor epitaxy, ukukhula kwe-LED wafer kanye nokuthuthukiswa kwamadivayisi asekelwe ku-GaN.
Osayizi abahlukene bephakethe kanye nokwakheka kwendawo kunganikezwa ngosayizi othile we-wafer kanye nemiklamo ye-reactor.
Imisebenzi Yethu

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