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I-MOCVD SiC Coated Graphite Susceptor
| Indawo Origin: | China |
| Igama Brand: | I-Semixlab |
| Inombolo Model: | MSCGS-01 |
| Certification: | ISO9001 |
| Ubuncane Order Ubuningi: | 1 isethi |
| Price: | Othintana naye ukuze uthole ikhotheshini eyenziwe ngokwezifiso |
| Okufakiwe Yokuxhumana: | Iphakheji yokuthekelisa ejwayelekile |
| Delivery Isikhathi: | Izinsuku ezingama-35-40 ngemuva kokuqinisekiswa kwe-oda |
| Inkokhelo Imigomo: | T / T |
| Supply Amandla: | 1000 amasethi/Inyanga |
Incazelo
1. Impilo inwetshwa ngo-300%+
Ubuchwepheshe besendlalelo se-buffer buvumela inani lemijikelezo yokushaqeka okushisayo ukuthi libe likhulu kunezikhathi ezingu-5,000 (ngaphansi kwezikhathi ezingu-1,500 emikhiqizweni evamile).
Izinga lokushisa eliqhubekayo lokusebenza lingafinyelela ku-1650 ° C, futhi ukugqoka akubonisi imifantu noma ukuxebuka.
2. Isiqinisekiso sokungcoliswa kwezero
Ukuhlanzeka kwe-SiC coating kuyibanga le-6N (inani eliphelele lokungcola kwensimbi <0.5ppm).
Uphumelele ukuhlolwa kokukhishwa kwezinhlayiyana okujwayelekile kwe-SEMI (Inhlanzeko Yekilasi Le-10).
3. Ukuthuthukiswa kokufana kwenkambu eshisayo
Umehluko wezinga lokushisa endaweni eyisisekelo ungaphansi kuka-±2°C (idatha elinganiselwe yokucaciswa okungu-Φ300mm).
Isekela ukushisisa okusheshayo (20°C/s) ngaphandle kokuguquka kokushisa.
4. Ukumelana nokugqwala okuhle kakhulu
Imelana nokugqwala ngamagesi afana ne-H2, NH3, ne-TMAl, nempilo yesevisi engaphezu kwezinyanga eziyi-18.
Izinga lokushintsha lobuqhwaga bomhlaba lingaphansi kuka-5% (ihlolwe ngemva kwemijikelezo yenqubo eyi-100).
5. Ihambisana namamodeli ajwayelekile emhlabeni jikelele
Isekela ukwenza ngokwezifiso ngobubanzi obusuka ku-50 kuye ku-500mm.
6. Ukuthuthukiswa kwezindleko zomjikelezo Wokuphila Okugcwele
Umjikelezo wokunakekela unwetshiwe waba ngokuphindwe kathathu kunemikhiqizo evamile.
Izinga lokukhiqiza lama-epitaxial wafers lenyuke ngo-2-3%.
Amandla Enkampani
I-Semixlab Technology Co., Ltd inezikhungo ezimbili ze-R&D, izisekelo zokukhiqiza ezi-2, imigqa yokukhiqiza engu-2, abasebenzi abangu-12+, kanye nama-akhawunti okutshalwa kwezimali e-R&D angaphezu kuka-150%. Isakhiwo somkhiqizo wethu sisetshenziswa kakhulu ku-LED, isekethe ehlanganisiwe ye-IC, i-semiconductor yesizukulwane sesithathu, i-photovoltaic nezinye izimboni. I-Semixlab inamandla e-R&D, ukukhiqiza namandla ahlanganisiwe okuhlola nokuqinisekisa. Ngesikhathi esifanayo, sihlala sithuthukisa ubuchwepheshe bethu kanye nemishini ngokutshalwa kwezimali okungamashumi ezigidi ngonyaka.
Imininingwane
Imingcele yokusebenza engukhiye
Amapharamitha wephrojekthi
Izinto eziyisisekelo yi-graphite ecindezelwe ye-SGL isostatic
Ukujiya kokumboza: 80-200μm (kungenziwa ngokwezifiso)
Ukuhlanzeka kwe-coating ≥99.9999%
Ukuminyana: 1.85-1.90 g/cm³
I-Thermal conductivity: 125 W/m·K (RT)
Amandla e-Flexural ≥45 MPa
Izinga lokushisa lokusebenza ≤1800°C (umkhathi ongenayo)
Uhlelo lokuqinisekisa ikhwalithi
Ukulandeleka kwenqubo egcwele: Ukuqoshwa kwedatha egcwele kusuka ku-graphite substrate kuya kunqubo yokumboza.
Ukutholwa okunembayo: Ukuhlaziywa kwe-SEM/EDS kokunamathela, ukutholwa kokuvuza kwe-helium mass spectrometry, ukuhlolwa kokushaqeka okushisayo kwezinga eliphezulu.
| Izakhiwo ezibonakalayo eziyisisekelo ze-CVD SiC coating | |
| Property | Value ejwayelekile |
| Isakhiwo Sekristalu | I-FCC β isigaba se-polycrystalline, ikakhulukazi (111) umumo |
| Ubuningi | 3.21 g / cm³ |
| ubulukhuni | 2500 Vickers ubulukhuni (500g umthwalo) |
| Grain SiZe | 2 ~ 10μm |
| I-Chemical Purity | 99.99995% |
| Amandla Okushisa | 640 J·kg-1·K-1 |
| I-Sublimation Temperature | 2700 ℃ |
| Amandla weFlexural | 415 MPa RT 4-iphoyinti |
| I-Modulus Encane | 430 Gpa 4pt ukugoba, 1300℃ |
| I-Thermal Conductivity | 300W·m-1·K-1 |
| Ukunwetshwa kwe-Thermal(CTE) | 4.5 × 10-6K-1 |
Izakhiwo eziyisisekelo ze-CVD SiC coating:
Izicelo
Izimo zohlelo lokusebenza noma okokusebenza: Imishini ye-Aixtron Epi
Izimo zohlelo lokusebenza
● Ukukhiqizwa kwe-chip ye-LED: I-GaN eluhlaza okwesibhakabhaka/emhlophe ye-LED ukukhula kwe-epitaxial.
● Ama-semiconductors Amandla: Amadivayisi kagesi we-SiC/GaN (MOSFET, HEMT).
● Amadivaysi efrikhwensi yomsakazo we-5G: i-chip substrate yefrikhwensi yomsakazo we-microwave ephezulu.
● I-Laser diode: I-VCSEL, inqubo ye-laser epitaxial ephuma emaphethelweni.
● Ukupakishwa okuthuthukisiwe: Ukubekwa kwamafilimu amancanyana esemiconductor anembe kakhulu.
Ukubuka konke kochungechunge lwemboni ye-semiconductor chip epitaxy:
Imisebenzi Yethu
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