I-CVD SiC coating wafer susceptor

I-Semixlab igxile ekuthuthukisweni nasekukhiqizeni i-high-purity silicon carbide (SiC), futhi izimisele ukuhlinzeka ngezixazululo ezisebenza kahle kakhulu embonini ye-semiconductor. Ngobuchwepheshe obuthuthukisiwe be-chemical vapor deposition (CVD), sihlinzeka ngezinsizakalo zokumboza ngokwezifiso zama-wafer susceptors ukuze siqinisekise ukusebenza kwazo okuphezulu ezindaweni zenqubo ezeqisayo.

Sakha i-high-purity β-SiC coating (i-crystal orientation (111)) ebusweni be-high-purity graphite substrate ngokusebenzisa ubuchwepheshe be-CVD, ngesikhathi esifanayo, inokumelana nokushisa okuphezulu kakhulu, ukumelana nokugqwala kanye nekhono lokusabalalisa ukushisa okufanayo. Imikhiqizo elungele i-Aixtron, i-Veeco nezinye izinto ezisetshenziswa kakhulu zokukhula kwe-epitaxial, ezisetshenziswa kakhulu kuma-GaN/GaAs nokunye ukukhula kwe-epitaxial.

I-substrate ye-CVD SiC coating wafer yenziwe nge-graphite ye-SGL ehlanzekile, futhi i-silicon carbide enamathelayo ikhuliswa ngokulinganayo endaweni yayo ngenqubo ye-chemical vapor deposition (CVD). Le nqubo yenziwa ekamelweni lokuphendula izinga lokushisa eliphezulu futhi iqinisekisa ubuqotho bekristalu be-nanoscale benamathela ngokulawula ngokunembile isilinganiso somthombo we-silicon (isb, i-methyltrichlorosilane) negesi yomthombo wekhabhoni, i-gradient yezinga lokushisa (imvamisa ephakathi kuka-1000°C no-1400℃) nezinga lokubeka. Ugqinsi lwe-coating lungenziwa ngendlela oyifisayo ngokuya ngezidingo zohlelo lokusebenza, kusukela kuma-microns ambalwa kuya kumashumi ama-microns, ukuze kuhlangatshezwane nezidingo zamandla emishini emazingeni okushisa adlulele, kuyilapho kugwenywa ingozi yokuqhekeka kwengcindezi ngenxa yokuqina okweqile.

Ekukhuleni kwe-epitaxial ye-LED, ithreyi ye-wafer idinga ukumelana namazinga okushisa aphezulu ngokushesha angaphezu kuka-1600℃ kanye nokujikeleza okusheshayo kokushisa. Njengoba inephuzu layo lokuncibilika eliphezulu (cishe u-2700℃), i-coefficient ephansi yokwanda kokushisa (4.5×10 ^-6 /K) kanye nokuqhuba kahle kokushisa (~120 W/m·K), i-CVD SiC coating ingagcina ukuzinza kwejometri ngaphansi kokushintshashintsha okukhulu kokushisa futhi igweme ukugoba kwe-wafer noma imifantu emincane ebangelwa ukucindezeleka kokushisa. Ngaphezu kwalokho, ukungangeni kwamakhemikhali kwe-SiC kuyenza ibonise ukumelana okunamandla kokugqwala ezindaweni ezigqwalisayo (njenge-HCl, H2 ₎ , kunciphisa kakhulu ukungcola okubangelwa ukuguquguquka noma ukusabela okungekuhle ngesikhathi senqubo, ngaleyo ndlela kuthuthukiswe ukufana kwesendlalelo se-epitaxial ebusweni be-wafer kanye nomkhiqizo wedivayisi.

Lo mkhiqizo usetshenziswa kabanzi ekukhiqizweni kwe-semiconductor yesizukulwane sesithathu, ukukhiqizwa kwe-chip ye-LED enamandla aphezulu. Isibonelo, enkambisweni ye-metal-organic chemical vapor deposition (MOCVD) yamadivayisi e-GaN-on-SiC RF, ithreyi ye-CVD SiC ifinyelela ukufana kwezinga lokushisa ngaphakathi kwe-±1℃ yendawo ye-wafer ngokusebenzisa umklamo oqondile wokusabalalisa insimu yokushisa, okuqinisekisa ukuthi ukuphambuka kobukhulu bengqimba ye-epitaxial kungaphansi kwe-1%. Ngesikhathi esifanayo, izici zayo zokukhishwa kwezinhlayiya eziphansi (ubuningi bezinhlayiya <0.1/cm ² njengoba kulinganiswa yi-SEM-EDS) kuyenza ibe yinhle kakhulu ezindaweni zamakamelo ezihlanzekile kakhulu, ikakhulukazi ezifanelekela ama-node enqubo athuthukile azwela amaphutha (njengezinqubo ezisizwayo zama-chip e-logic angaphansi kwe-5 nm).

Uma kuqhathaniswa namathreyi e-wafer endabuko, impilo yesevisi ye-CVD SiC coating wafer hy pnotic tor inganwetshwa izikhathi ezi-3-5. Izici zayo zokuzihlanza ebusweni zinciphisa imvamisa yokulungisa futhi, kuhlangene nobuchwepheshe bokuhleleka bendawo yokuhlanganisa, kunciphisa imbuyiselo yomjikelezo wokutshalwa kwezimali ngaphezu kuka-40%. Ngokusho kwedatha yokulinganisa yezimboni, ulayini wokukhiqiza we-SiC we-epitaxial ongu-6 intshi usebenzisa lo mkhiqizo unganciphisa ukushintshashintsha kwenqubo phakathi kwamaqoqo ngo-15%, ukhuphule umthamo wonyaka wokukhiqiza ngo-20%, futhi unciphise izinga le-scrap ngenxa yokungcola libe ngaphansi kuka-0.03%.

Ukusuka ocwaningweni nasekuthuthukisweni kwaselabhorethri kuye ekukhiqizeni ngezinga elikhulu, i-Semixlab's CVD SiC coating wafer hy pnotic tor ibilokhu iqondiswe kumholi wemboni. Akuyona nje inqubo esebenzisekayo, kodwa futhi isisekelo sobuchwepheshe emkhakheni wokukhiqiza ukunemba kwezinga lokushisa eliphezulu. Izoqhubeka nokuhlinzeka ngesiqinisekiso esinokwethenjelwa sokwenziwa kwamadivayisi asezingeni eliphezulu emikhakheni esezingeni eliphezulu njengokuxhumana kwe-5G, amandla kagesi amasha kagesi, kanye ne-quantum computing.

Ukusekelwa kwe-Wafer nokudluliswa kokushisa ezinqubweni ze-MOCVD, okuhlanganisa i-LED eluhlaza okwesibhakabhaka nokuluhlaza, i-UV LED kanye ne-deep-UV LED njll., eguqulelwe kumishini evela ku-LPE, Aixtron, Veeco, Nuflare, TEL, ASM, Annealsys, TSI njalonjalo.

Ubuchwepheshe obuhamba phambili: inqubo ye-CVD yokufeza (i-111) i-orientation β-SiC, usayizi wokusanhlamvu 2-10μm, isakhiwo esiminyene.

Ukuzijwayeza kwemvelo okwedlulele: ukumelana nokushisa okuphezulu kwe-oxidation, ukumelana nokuguguleka kwe-plasma, umlotha <5ppm.

Ukuphatha okushisayo okuhle kakhulu: I-Thermal conductivity engu-300W/m·K, i-CTE ifanelana kahle ne-graphite ukuze kugwenywe ukuqhekeka kokucindezeleka okushisayo.

Isevisi yenqubo egcwele: Sekela ukucutshungulwa kwe-substrate, ukufakwa kwe-coating, ukuhlola ukulethwa kwe-one-stop.