I-MOCVD SiC Coated Graphite Susceptor

1. Impilo inwetshwa ngo-300%+

Ubuchwepheshe besendlalelo se-buffer buvumela inani lemijikelezo yokushaqeka okushisayo ukuthi libe likhulu kunezikhathi ezingu-5,000 (ngaphansi kwezikhathi ezingu-1,500 emikhiqizweni evamile).

Izinga lokushisa eliqhubekayo lokusebenza lingafinyelela ku-1650 ° C, futhi ukugqoka akubonisi imifantu noma ukuxebuka.

2. Isiqinisekiso sokungcoliswa kwezero

Ukuhlanzeka kwe-SiC coating kuyibanga le-6N (inani eliphelele lokungcola kwensimbi <0.5ppm).

Uphumelele ukuhlolwa kokukhishwa kwezinhlayiyana okujwayelekile kwe-SEMI (Inhlanzeko Yekilasi Le-10).

3. Ukuthuthukiswa kokufana kwenkambu eshisayo

Umehluko wezinga lokushisa endaweni eyisisekelo ungaphansi kuka-±2°C (idatha elinganiselwe yokucaciswa okungu-Φ300mm).

Isekela ukushisisa okusheshayo (20°C/s) ngaphandle kokuguquka kokushisa.

4. Ukumelana nokugqwala okuhle kakhulu

Imelana nokugqwala ngamagesi afana ne-H2, NH3, ne-TMAl, nempilo yesevisi engaphezu kwezinyanga eziyi-18.

Izinga lokushintsha lobuqhwaga bomhlaba lingaphansi kuka-5% (ihlolwe ngemva kwemijikelezo yenqubo eyi-100).

5. Ihambisana namamodeli ajwayelekile emhlabeni jikelele

Isekela ukwenza ngokwezifiso ngobubanzi obusuka ku-50 kuye ku-500mm.

6. Ukuthuthukiswa kwezindleko zomjikelezo Wokuphila Okugcwele

Umjikelezo wokunakekela unwetshiwe waba ngokuphindwe kathathu kunemikhiqizo evamile.

Izinga lokukhiqiza lama-epitaxial wafers lenyuke ngo-2-3%.

Amandla Enkampani

I-Semixlab Technology Co., Ltd inezikhungo ezimbili ze-R&D, izisekelo zokukhiqiza ezi-2, imigqa yokukhiqiza engu-2, abasebenzi abangu-12+, kanye nama-akhawunti okutshalwa kwezimali e-R&D angaphezu kuka-150%. Isakhiwo somkhiqizo wethu sisetshenziswa kakhulu ku-LED, isekethe ehlanganisiwe ye-IC, i-semiconductor yesizukulwane sesithathu, i-photovoltaic nezinye izimboni. I-Semixlab inamandla e-R&D, ukukhiqiza namandla ahlanganisiwe okuhlola nokuqinisekisa. Ngesikhathi esifanayo, sihlala sithuthukisa ubuchwepheshe bethu kanye nemishini ngokutshalwa kwezimali okungamashumi ezigidi ngonyaka.

Imingcele yokusebenza engukhiye

Amapharamitha wephrojekthi

Izinto eziyisisekelo yi-graphite ecindezelwe ye-SGL isostatic

Ukujiya kokumboza: 80-200μm (kungenziwa ngokwezifiso)

Ukuhlanzeka kwe-coating ≥99.9999%

Ukuminyana: 1.85-1.90 g/cm³

I-Thermal conductivity: 125 W/m·K (RT)

Amandla e-Flexural ≥45 MPa

Izinga lokushisa lokusebenza ≤1800°C (umkhathi ongenayo)

Uhlelo lokuqinisekisa ikhwalithi

Ukulandeleka kwenqubo egcwele: Ukuqoshwa kwedatha egcwele kusuka ku-graphite substrate kuya kunqubo yokumboza.

Ukutholwa okunembayo: Ukuhlaziywa kwe-SEM/EDS kokunamathela, ukutholwa kokuvuza kwe-helium mass spectrometry, ukuhlolwa kokushaqeka okushisayo kwezinga eliphezulu.

Izakhiwo eziyisisekelo ze-CVD SiC coating:

Izimo zohlelo lokusebenza noma okokusebenza: Imishini ye-Aixtron Epi

Izimo zohlelo lokusebenza

● Ukukhiqizwa kwe-chip ye-LED: I-GaN eluhlaza okwesibhakabhaka/emhlophe ye-LED ukukhula kwe-epitaxial.

● Ama-semiconductors Amandla: Amadivayisi kagesi we-SiC/GaN (MOSFET, HEMT).

● Amadivaysi efrikhwensi yomsakazo we-5G: i-chip substrate yefrikhwensi yomsakazo we-microwave ephezulu.

● I-Laser diode: I-VCSEL, inqubo ye-laser epitaxial ephuma emaphethelweni.

● Ukupakishwa okuthuthukisiwe: Ukubekwa kwamafilimu amancanyana esemiconductor anembe kakhulu.

Ukubuka konke kochungechunge lwemboni ye-semiconductor chip epitaxy: