Indandatho Yesiqeshana Esimboziwe se-TaC ye-SiC Epitaxy

Indandatho ye-TaC Coated Wafer ye-SiC Epitaxy iyingxenye ebalulekile yenqubo eyenzelwe ukuqinisekisa ukuzinza kokushisa kanye namakhemikhali emphethweni we-wafer ngesikhathi sokukhula kwe-silicon carbide epitaxial okushisa okuphezulu. Ezinqubweni ze-SiC CVD kanye ne-MOCVD, izimo zomphetho we-wafer zithinta kakhulu ukufana kokushisa, ukuziphatha kokugeleza kwegesi, kanye nokufakwa kwe-parasitic. Ngokuchaza ngokunembile umngcele wokusabela ozungeze ama-wafer e-SiC, indandatho ye-wafer idlala indima ebalulekile ekuqiniseni indawo yokukhula yendawo. Lokhu kuqinisekisa ukujiya kwe-epitaxial okuhambisanayo, ukusatshalaliswa kwe-doping efanayo, kanye nesivuno esiphezulu somphetho kulo lonke ukukhiqizwa.

Le ngxenye isebenzisa i-graphite e-isostatic emsulwa kakhulu njengezinto zayo ze-substrate, ekhombisa ukuguquguquka okuvelele kokushisa, ubuqotho besakhiwo, kanye nokusebenza kahle ngaphansi kwezimo zenqubo ezimbi kakhulu. Ubuso be-substrate ye-graphite bumbozwe ngokulinganayo ngesendlalelo se-Tantalum Carbide (TaC) esiminyene, okwenza isithiyo esiqinile sokuvikela esinokumelana okungavamile nokugqwala kwamakhemikhali kanye nokuwohloka kokushisa. Ngaphakathi kwendawo edingakalayo ye-SiC epitaxy—esebenza emazingeni okushisa angaphezu kuka-1600 °C ngamagesi asebenzayo aqukethe i-hydrogen nama-halogen—i-Tantalum Carbide Coating icindezela ngempumelelo ukugqwala kwe-graphite, inciphisa ukukhiqizwa kwezinhlayiya, futhi igcina izimo zobuso ezizinzile kuyo yonke imijikelezo yokusebenza ende.

Ngokombono wenqubo, izindandatho ze-wafer ezimbozwe yi-TaC zinegalelo ngqo ekuzinzisweni kwensimu yokushisa emphethweni kanye nokulawulwa kokugeleza kwegesi, kunciphisa ukungalingani okuhlobene nomngcele kanye nokunciphisa ukufakwa kwezinambuzane ezifweni ezizungezile. Ukungangeni kwamakhemikhali kwe-TaC kanye nendawo ephezulu yokuncibilika (3880°C) kuvumela ukuchayeka isikhathi eside ezindaweni zamakhemikhali e-epitaxial ezibolayo ngaphandle kokuwohloka noma ukuhlukanisa, okubalulekile ekugcineni ubuningi obuphansi bokukhubazeka kanye nokusebenza kwenqubo okuphindaphindwayo. Uma kuqhathaniswa nezingxenye ze-SiC ezingamboziwe noma ezivamile, izakhiwo ezimbozwe yi-TaC zandisa kakhulu impilo yesevisi, zithuthukisa ukuhambisana kwenqubo, futhi zinciphisa izindleko eziphelele zobunikazi ekukhiqizweni komthamo.

Njengomhlinzeki ohamba phambili waseShayina wezinqubo ze-SiC epitaxy, ama-TaC Coated Wafer Rings ethu anikeza izixazululo zokuklama ezenziwe ngokwezifiso ezenzelwe izidingo zakho zokukhiqiza ezithile. Silangazelela ngobuqotho ukuba ngumlingani wakho wesikhathi eside eShayina.

I-Tantalum carbide (i-TaC) enamathela esigcemeni se-microscopic