I-CVD SiC single wafer susceptor

Izimo zohlelo lokusebenza noma okokusebenza: Imishini ye-AMTA epitaxial

Ukuhlanzeka okuphezulu kakhulu (≤100ppb, okuqinisekisiwe kwe-ICP-E10) kanye nokuzinza okukhethekile kwe-thermal/chemical ukukhula okumelana nokungcola kwe-GaN, SiC, kanye nezendlalelo ze-epi ezisekelwe ku-silicon. Iklanywe ngobuchwepheshe be-CVD obunembayo, isekela ama-wafers angu-6"/8"/12", iqinisekisa ukucindezeleka okuncane kokushisa, futhi imelana namazinga okushisa aphezulu afika ku-1600°C.

Amandla Enkampani

I-Semixlab Technology Co., Ltd inezikhungo ezimbili ze-R&D, izisekelo zokukhiqiza ezi-2, imigqa yokukhiqiza engu-2, abasebenzi abangu-12+, kanye nama-akhawunti okutshalwa kwezimali e-R&D angaphezu kuka-150%. Isakhiwo somkhiqizo wethu sisetshenziswa kakhulu ku-LED, isekethe ehlanganisiwe ye-IC, i-semiconductor yesizukulwane sesithathu, i-photovoltaic nezinye izimboni. I-Semixlab inamandla e-R&D, ukukhiqiza namandla ahlanganisiwe okuhlola nokuqinisekisa. Ngesikhathi esifanayo, sihlala sithuthukisa ubuchwepheshe bethu kanye nemishini ngokutshalwa kwezimali okungamashumi ezigidi ngonyaka.

I-CVD SiC single wafer susceptor isetshenziswa kakhulu ezintweni ezisetshenziswayo ze-silicon epitaxy, izinto ezibonakalayo zingeniswa ngaphandle kwe-graphite + CVD SiC coating.

Imingcele yokucaciswa okuyisisekelo: i-silicon carbide coating kanye ne-graphite material:

Izinhlelo eziyinhloko:

Njengesesekeli kumishini ye-epitaxy ye-AMTA, singahlinzeka nge-wafer susceptor engu-6inch 8inch 12inch.

I-CVD SiC single wafer susceptor emishinini ye-AMTA epitaxy:

1. Ukusekelwa kwe-wafer kanye ne-thermal field homogenization

Njengomsebenzi oyinhloko we-CVD SiC single wafer susceptor emishinini ye-AMTA epitaxy Ku-MOCVD, CVD nezinye izinto ze-epitaxy, i-susceptor isebenza njengesithwali se-wafer, futhi idlulisa ukushisa ngokulinganayo endaweni eyilucwecwe ngendlela yokushisisa ukumelana noma ukushisisa kwe-RF ukuze kuqinisekiswe ukukhula okufanayo kwezingqimba ze-epitaxial (isb. GaN, SiC).

Idizayini yayo ephezulu ye-thermal conductivity inciphisa ukuthambeka kwezinga lokushisa phakathi konqenqema naphakathi, ilawula ukufana kwezinga lokushisa ngaphakathi kuka-±1°C nokugwema ukonakala kwezinto ezibonakalayo.

2. I-Chemical Pollution Barrier

Ama-Graphite substrates achayeke ngokuqondile kumagesi okucubungula avame uku-oxidize enze i-CO₂ noma impushana, angcolise igumbi lokusabela. I-CVD SiC coating isebenza njengesendlalelo esivikelayo sokuhlukanisa i-graphite kumagesi agqwalayo kanye nokunciphisa ukungcoliswa kwezinhlayiya endaweni eyi-wafer.

Isibonelo, kunqubo ye-GaN epitaxy, i-coating ingamelana ngokuphumelelayo nokuguguleka kwezinto ezandulelayo ezifana ne-NH₃ ne-TMGa, futhi iqinisekise ubumsulwa befilimu.

3. Ukujwayela izinqubo ezihlukahlukene ze-epitaxial

Ama-semiconductors esizukulwane sesithathu: we-SiC noma i-GaN epitaxy kuma-substrates e-SiC, ukuze ahlangabezane nezimfuneko zamadivayisi anamandla aphezulu kumafilimu awugqinsi namazinga aphansi okukhubazeka.

Ukukhiqizwa kwe-Micro-LED: ukusekela ukuma okunembayo okuphezulu nokuphathwa okushisayo kwamawafa anosayizi omncane (isb., amayintshi angu-8), nokunciphisa ukuhlakazeka kokusabalalisa kwamaza.

Izici zezinto ezibonakalayo: ukusebenza okuhle kakhulu kwe-CVD SiC

1. Ukuhlanzeka okuphezulu kakhulu kanye nesakhiwo esiminyene

I-silicon carbide (SiC), efakwe nge-chemical vapor deposition (CVD), ifinyelela amazinga okungcola ≤100ppb (E10 standard) njengoba kuqinisekiswe yi-ICP-MS (Inductively Coupled Plasma Mass Spectrometry). Lokhu kuhlanzeka okuphezulu kakhulu kunciphisa izingozi zokungcola ngesikhathi sokukhula kwe-epitaxial, kuqinisekisa ikhwalithi ephezulu yekristalu yezinhlelo zokusebenza ezibucayi njenge-gallium nitride (GaN) ne-silicon carbide (SiC) yokukhiqiza i-wide-bandgap semiconductor.

Isakhiwo sokumboza siminyene futhi siyafana, sinobuqhwaga obuphansi, okunciphisa ubungozi bokuchitheka kwezinhlayiyana futhi sihlangabezana nezidingo ezisezingeni eliphakeme zamagumbi ahlanzekile e-semiconductor.

2. Ukumelana nemvelo ngokwedlulele

Ukumelana nokushisa okuphezulu: Ingakwazi ukugcina ukuzinza kwe-physicochemical ku-1600 ° C, ephakeme kakhulu kunomkhawulo we-oxidization we-graphite substrate (cishe 400 ° C), yandisa kakhulu impilo yayo yesevisi.

I-Corrosion Resistance: Imelana kakhulu namagesi abolayo njenge-Cl₂, i-H₂ nokuguguleka kwe-plasma, ifanele i-MOCVD, i-MBE nezinye izindawo zenqubo ezinokhahlo.

3. Ukusebenza okuhle kakhulu kwe-thermal

I-Thermal conductivity efinyelela ku-300 W/mK iqinisekisa ukuthi ama-wafers ashiselwa ngokufanayo, kunciphisa ukuchezuka kogqinsi lwe-epitaxial layer (isb, izinkinga zokushintsha kwe-wavelength), futhi kuthuthukisa ukukhiqizwa kwama-LED, amadivayisi kagesi, neminye imikhiqizo.

I-coefficient of thermal expansion (4×10-⁶/K) iseduze naleyo ye-graphite substrate, egwema ukuqhekeka noma ukuxebuka kwe-coating ngenxa yokushintsha kwezinga lokushisa.

4. Amandla omshini nokuqina

Amandla e-Flexural afika ku-470 MPa, akwazi ukumelana nokuhamba ngebhayisikili okuphezulu kwe-high-frequency high-temperature-low-temperature kanye nokucindezeleka komshini, ukunciphisa imvamisa yesondlo.

Njengamanje, ukuhlanzeka kwe-silicon carbide yethu enamathela kungafinyelela ku-E10 ekuhlolweni kwe-ICP, okungaba ngu-100 ppb, futhi leli zinga lokuhlanzeka liphakathi kwezinga eliphezulu e-China.