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I-SiC Coated graphite heater ye-MOCVD
I-Semixlab SiC Coated Graphite MOCVD Heater iyisithwali esishisisayo esisebenza kahle esidizayinelwe izinqubo zokukhiqiza i-semiconductor esebenzisa i-chemical vapor deposition (CVD) ukuze yakhe ukumbozwa kweyunifomu, eminyene ye-silicon carbide (SiC) ebusweni be-ultra-high purity graphite substrate.
Incazelo
Imikhiqizo Yokuxhumana
I-SiC Coated Graphite MOCVD Heater ihlanganisa ukuqhutshwa kokushisa okuhle kakhulu kwegraphite nezinga lokushisa eliphezulu nokumelana nokugqwala kwezingubo ze-SiC, futhi isetshenziswa kabanzi kumishini ye-metal-organic chemical vapor deposition (MOCVD) ukuze kuqinisekiswe ukuzinza nokuhlanzeka okuphezulu ezinqubweni zokukhula kwe-wafer epitaxy.
Izici zomkhiqizo we-SiC Coated Graphite MOCVD heater
1. Ukuhlanzeka okuphezulu kakhulu kanye nokuzinza kwamakhemikhali
Ubumsulwa ≥99.99995%: Isifudumezi sethu se-Graphite silungiswa ngaphansi kokushisa okuphezulu kwe-chlorination ngenqubo ye-CVD, egwema ngempumelelo ukungcoliswa kokungcola kwensimbi futhi ihlangabezana nesidingo sezindawo ezihlanzeke kakhulu ekukhiqizeni i-semiconductor.
I-Anti-chemical corrosion: Ukuqina nokuqina okuphezulu kwe-SiC coating (ukuqina kwe-Vickers ka-2500-2800) kungamelana nokuguguleka kwama-acids, ama-alkali, usawoti kanye nezincibilikisi eziphilayo, okwelula impilo yesevisi yemishini endaweni yegesi egqwalayo.
2. Ukumelana nokushisa okuphezulu okuhle kakhulu
Ukuqina kokushisa okuphezulu: kungakwazi ukumelana no-3000 ° C emkhathini ongenayo, ukusebenza okuzinzile kuze kufike ku-2200 ° C endaweni ye-vacuum, kanye ne-1600-1700 ° C endaweni ene-oxidizing, efanelekile izimo ezimbi kakhulu zekamelo lokusabela le-MOCVD.
I-Coefficient Ephansi Yokunweba Okushisayo (4.5 x 10-⁶K-¹): Lesi sici se-MOCVD Graphite Heater sehlisa ngempumelelo ukuqhekeka kwe-coat noma ukuxebuka ngenxa yokushintsha kwezinga lokushisa, iqinisekisa ubuqotho besakhiwo ngaphansi kokuhamba ngebhayisikili okushisayo kwesikhathi eside.
3. Ukusebenza okuthuthukisiwe kokuphatha okushisayo
I-High Thermal Conductivity (200-300 W/mK): I-thermal conductivity ephezulu ye-Graphite MOCVD Heater inquma ukuthi umkhiqizo ungadlulisa ngokushesha futhi ngokufanayo ukushisa ukuze uzuze ukusabalalisa okungaguquki kwezinga lokushisa le-wafer surface (±1°C), ngaleyo ndlela kuthuthukiswe ngempumelelo ukufana kongqimba lwe-epitaxial.
I-Laminar Gas Flow Field Design: Ngemva kokuphindaphinda nokuthuthukiswa kobuchwepheshe obuqhubekayo, ubushelelezi bendawo ye-MOCVD Heater (Ra ≤ 0.8μm) kanye nokwenza kahle kwejometri kuqinisekisa ukusatshalaliswa okufanayo kwamagesi asebenzayo futhi kunciphisa ukungafani kwe-deposition okubangelwa isiyaluyalu.
Imininingwane
Imingcele Yezobuchwepheshe Ukuqhathanisa Nezinzuzo
| Izici | Semixlab SiC camera heater | Izifudumezi ze-graphite ezivamile |
| Izinga lokushisa eliphezulu lokusebenza (inert) | 3000 ° C | 2500 ° C |
| I-Chemical Purity | ≥99.99995% | ≤99.99 |
| Ukuqhuba kwe-thermal | 300W/mK | 120-150 W/mK |
| Ukubambelela kokugqoka | 415 MPa (amaphuzu ama-4 ukugoba) | 100-200 MPa |
| Impilo ejwayelekile (imijikelezo) | > 500 imijikelezo | 100-200 imijikelezo |
Competitive Advantage
Kungani i-Semixlab?
Ukwenza ngendlela oyifisayo: I-Semixlab izibophezele ekuhlinzekeni ngemikhiqizo eyenziwe ngokwezifiso kanye nezinsizakalo zobuchwepheshe kumakhasimende ethu. Sisekela ukwenza ngokwezifiso osayizi abangajwayelekile (kufika ku-360mm ububanzi) nobukhulu bokunamathela (20-500μm) ukuze kuhlangatshezwane nezidingo zemishini eminingi.
Isitifiketi Somhlaba Wonke: I-SiC Coated Graphite Heater yethu iyathobelana ne-SEMI, iqinisekisiwe i-ISO 9001, futhi imikhiqizo yethu ithunyelwa ikakhulukazi e-Europe nase-United States, kanye nase-Japan naseNingizimu Korea, ngenzuzo enkulu yentengo/yokusebenza.
I-Technical synergy: I-Semixlab sekuyisikhathi eside igcina ukubambisana okusondelene nezikhungo eziphezulu zocwaningo e-China, isebenzisa ubuchwepheshe bokunamathela obunelungelo lobunikazi (njengenqubo ye-CGT Carbon's SiC³) ukuze ithuthukise ukuminyana kokunamathela kanye nokumelana nokushaqeka okushisayo.
