I-SiC Coated Collector Top ye-Aixtron
I-Semixlab's SiC Coated Collector Top ye-Aixtron iyingxenye ebalulekile eyenzelwe izinhlelo ze-Aixtron MOCVD. Isebenzisa i-high-purity silicon carbide (SiC) futhi inokumelana okuhle kakhulu nezinga lokushisa eliphezulu, ukumelana nokugqwala kanye nokuzinza kokushisa. Njengengxenye ewumnyombo yokulawula ukungcola nokugcina ukufana okushisayo ku-epitaxial cavity, idlala indima engenakuthathelwa indawo kunqubo yokukhula kwe-epitaxial yezinto zesizukulwane sesithathu ze-semiconductor ezifana ne-GaN ne-SiC. Lo mkhiqizo awugcini nje ukunciphisa ngempumelelo ukungcola kwezinhlayiyana futhi uthuthukise ikhwalithi ye-epitaxial layer, kodwa futhi wandisa kakhulu umjikelezo wokusebenza kwemishini. Kuyisixazululo esiyinhloko sokuqinisekisa izinqubo ze-epitaxial eziphumelelayo nezithembekile.
Incazelo
Ngesipiliyoni seminyaka ekukhiqizeni i-TaC yokugqoka kanye ne-SiC coating, i-Semixlab ingahlinzeka ngezinhlobonhlobo ze-SiC Coating Collector Top, isikhungo sokuqoqa, phansi komqoqi wesistimu ye-Aixtron. Ikhwalithi ephezulu ye-SiC Coated Collector Top ingahlangabezana nezinhlelo zokusebenza eziningi, uma uzidinga, sicela uthole isevisi yethu ye-inthanethi efika ngesikhathi mayelana ne-Silicon Carbide Coating Collector Top. Ngokungeziwe kuhlu lomkhiqizo olungezansi, ungakwazi futhi ukwenza ngezifiso i-SiC Coating Collector Top yakho ehlukile ngokuya ngezidingo zakho ezithile.
Umqoqi we-SiC coating top, isikhungo sokuqoqwa kwe-SiC coating, kanye ne-SiC coating collector bottom yizingxenye ezintathu eziyisisekelo ezisetshenziswa kwinqubo yokukhiqiza i-semiconductor. Ake sixoxe ngomkhiqizo ngamunye ngokwehlukana:

1. I-SiC Coating Collector Top
I-Silicon Carbide SiC Coated Collector Top ye-Aixtron idlala indima ebalulekile enqubweni yokubeka i-semiconductor. Isebenza njengesakhiwo sokusekela sento efakiwe, esiza ukugcina ukufana nokuzinza ngesikhathi sokubekwa. Iphinde I-AIDS ekulawuleni okushisayo, ikhiphe ngokuphumelelayo ukushisa okukhiqizwa phakathi nenqubo. Ingaphezulu lomqoqi liqinisekisa ukuhlelwa okulungile nokusatshalaliswa kwezinto ezifakiwe, okuholela ekukhuleni kwefilimu kwekhwalithi ephezulu nokungaguquguquki.
2. SiC Coated Collector Center
I-1) Umsebenzi wokuqondisa ukugeleza komoya: Itholakala maphakathi negumbi lokusabela, Isikhungo Sokuqoqwa Kwe-SiC Coated sisiza ukukhulisa ukusabalalisa kwenkundla yokugeleza kwegesi kunqubo ye-MOCVD, ngaleyo ndlela sithuthukise ukufana kwe-epitaxial deposition.
2) Ukuvimbela ukukhiqizwa kwezinhlayiya zokungcola: Isikhungo indawo lapho ukugxiliswa kwama-reactants andulelayo kanye nokuqoqwa kwemikhiqizo ekhiqizwayo kugxile kakhulu. Ukusetshenziswa kwe-SiC coating kunganciphisa ngempumelelo ukunamathela kwezinhlayiya futhi kunciphise ingozi yokungcoliswa kwezinhlayiyana.
3. I-SiC Coated Collector Bottom
1) Indawo yokuqoqwa kwenhlabathi: Itholakala ngaphansi kwegumbi lokusabela, umsebenzi wayo oyinhloko ukuqoqa izandulela nemikhiqizo eyengeziwe ukuze ivinjwe ukuthi ingaphinde igaywe kabusha noma yakhe ukungcola.
I-2) Ukusekelwa kwesakhiwo kanye nomsebenzi wokuvikela ukushisa: Isakhiwo esingaphansi sidinga ukuthwala isisindo semishini nokucindezeleka okushisayo. Amandla nokuzinza okushisayo kwe-SiC kungaqinisekisa ukuthi ngeke kukhubazeke noma kuxebuke ngesikhathi sokusetshenziswa isikhathi eside.
I-SiC coating phezulu, isikhungo nangaphansi komqoqi inikeza amandla amahle kakhulu okuphatha ukushisa, ukuqinisekisa ukuchithwa kokushisa okuphumelelayo nokugcina izinga lokushisa elilungile lenqubo. Iphinde ibe nokumelana namakhemikhali okuhle kakhulu, ivikela izingxenye zayo endaweni ebolayo futhi inwebe impilo yazo yesevisi. Izakhiwo ze-SiC coatings zisiza ukuthuthukisa ukuzinza kwezinqubo zokukhiqiza ze-semiconductor, ukunciphisa amaphutha nokuthuthukisa ikhwalithi yefilimu.
Imininingwane
| Izakhiwo ezibonakalayo eziyisisekelo ze-CVD SiC coating | |
| Property | Value ejwayelekile |
| Isakhiwo Sekristalu | I-FCC β isigaba se-polycrystalline, ikakhulukazi (111) umumo |
| Ubuningi | 3.21 g / cm³ |
| ubulukhuni | 2500 Vickers ubulukhuni (500g umthwalo) |
| Grain SiZe | 2 ~ 10μm |
| I-Chemical Purity | 99.99995% |
| Amandla Okushisa | 640 J·kg-1·K-1 |
| I-Sublimation Temperature | 2700 ℃ |
| Amandla weFlexural | 415 MPa RT 4-iphoyinti |
| I-Modulus Encane | 430 Gpa 4pt ukugoba, 1300℃ |
| I-Thermal Conductivity | 300W·m-1·K-1 |
| Ukunwetshwa kwe-Thermal(CTE) | 4.5 × 10-6K-1 |
Izakhiwo ezibonakalayo eziyisisekelo ze-CVD SiC coating

Izicelo
Ukubuka konke kochungechunge lwemboni ye-semiconductor chip epitaxy:

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