I-SiC Furnace Tube

Incazelo Yomkhiqizo Nezici Eziyinhloko

I-SiC furnace tube isitsha se-tubular high-temperature esenziwe nge-high-purity silicon carbide ceramics ngokusebenzisa i-reactive sintering (RBSC) noma izinqubo ze-chemical vapor deposition (CVD). Ngokungafani nezinto zensimbi zendabuko noma ze-quartz, ukwakheka kwekristalu okuhlukile kwe-SiC kuyinikeza izakhiwo ezingenakushintshwa zomzimba namakhemikhali, okuyivumela ukuthi igcine ukuqina kokusebenza okuhle kakhulu ezindaweni eziyingozi kakhulu.

Izici ezibonakalayo zomkhiqizo:

● Ukubekezelela izinga lokushisa eliphezulu kakhulu: Kungasebenza ngokuzinza isikhathi eside ngaphezu kuka-1600℃ endaweni engasebenzi, futhi izinga lokushisa eliphephile lokusebenzisa endaweni ene-oxidizing lingu-1250-1300℃, lidlula kude imikhawulo yamashubhu e-quartz (≤1100℃) kanye nama-alloys angashisi angu-1150 (≤XNUMX℃).

● I-Thermal conductivity nokuzinza kwe-thermal:

I-thermal conductivity iphezulu njengo-100-200 W/m·K, okuphindwe izikhathi ezingaphezu kwe-100 kunengilazi yequartz. Ingakwazi ukuzuza ukusatshalaliswa kokushisa okufanayo esithandweni (i-gradient ≤±2℃), isuse inkinga yendawo eshisayo evamile kumashubhu esithandweni somlilo.

I-coefficient yokwandisa okushisayo ingu-4.0×10⁻⁶/℃ kuphela (20-1000℃), ihlanganiswe nemodulus enwebekayo ephezulu engu-350 GPa, ukuze kuqinisekiswe ubuqotho besakhiwo phakathi nezinguquko ezishisayo zokushisa.

● Amandla emishini nokumelana nokugqoka: Ubulukhuni be-Mohs ≥9 (isibili kuphela kwedayimane), amandla okugoba angu-300 MPa, amandla acindezelayo angu-2000 MPa, ukumelana nokuguguleka kwezinhlayiyana nokucindezeleka komshini.

● Ukungangeni kwekhemikhali: Imelana nokugqwala kwe-asidi eqinile njenge-HF ne-HCl, imelana ne-plasma etching, ifaneleka ngokukhethekile indawo yokufaka okomile kwe-semiconductor.

Kungani ukhetha i-Semixlab?

I-Silicon Carbide Furnace Tubes esihlinzeka ngayo ayigcini nje ngokuhlangabezana nezidingo ezidlulele zokushisa okuphezulu, ukuhlanzeka okuphezulu, ukumelana nokugqwala, njll. ekukhiqizeni i-semiconductor, kodwa futhi sizuza ukwethenjwa kwamakhasimende ngokusekelwa okwenziwe ngokwezifiso, ukulethwa okusheshayo kanye nesevisi yekhwalithi ephezulu emva kokuthengisa.

Kungakhathaliseki ukuthi ungunjiniyela wemishini ye-wafer fab, umcwaningi waselabhorethri, noma isihlanganisi semishini, singakunikeza izixazululo ezinokwethenjelwa, ezihlala isikhathi eside nezihlanzekile zenqubo yakho yokwelapha eshisa kakhulu. Siyakwamukela ukuthi uxhumane nathi ukuze uqale umuzwa wakho omusha wokwelashwa okushisayo okusebenza kahle kakhulu.

Ukuqhathaniswa kokusebenza kwamashubhu omlilo we-SiC nezinye izinto:

Ukusetshenziswa okukhethekile ekucubunguleni nasekukhiqizeni i-semiconductor

I-SiC Furnace Tube idlala indima ebalulekile ekucubunguleni nasekukhiqizeni i-semiconductor, futhi ukusetshenziswa kwayo kuhlanganisa izixhumanisi zezinqubo ezibalulekile eziningi:

● Isithando somlilo:

Umsebenzi: I-Diffusion furnace iyisisetshenziswa esiyinhloko se-doping, i-oxidation, i-annealing nezinye izinqubo ekwenziweni kwe-semiconductor. Njengomugqa owumgogodla wesithando somlilo, ishubhu lesithando se-SiC sihlinzeka ngendawo ezinzile, ehlanzekile, enezinga eliphezulu lokushisa eliphezulu lewafer.

Izinzuzo: Ukuhlanzeka okuphezulu nokumelana nezinga lokushisa eliphezulu kwe-SiC kuqinisekisa ukuncishiswa kokungcola ngesikhathi senqubo yokusabalalisa futhi kugweme ukungcoliswa kwe-wafer. Ukuzinza kwayo okuhle kakhulu kokushaqeka kokushisa kuqinisekisa ubuqotho bethubhu yesithando somlilo ngesikhathi sokushisa nokupholisa, kanye nokuzinza kwesakhiwo ngaphansi kokusebenza kwesikhathi eside sokushisa okuphezulu, ukuze kuzuzwe ukugxila okunembile kwe-doping kanye nokukhula kwengqimba ye-oxide efanayo. Lokhu kubalulekile ekwakhiweni kwama-transistors asebenza kahle kakhulu namasekethe adidiyelwe.

● I-PECVD (I-Plasma Enhanced Chemical Vapor Deposition)/LPCVD (Low Pressure Chemical Vapor Deposition) Izisetshenziswa:

Umsebenzi: Emishinini ye-PECVD/LPCVD, amashubhu esithandweni se-SiC asetshenziswa njengamakamelo okusabela ukuze afake amafilimu ahlukahlukene amancane endaweni yamawafa, njenge-silicon oxide, i-silicon nitride, njll.

Izinzuzo: Ukumelana nokugqwala kwamashubhu esithandweni se-SiC kuwenza akwazi ukumelana nokuguguleka kwamagesi enqubo (afana ne-SiH4, NH3, N2O, njll.), ukuqinisekisa ukuzinza kwenqubo yokubeka ifilimu kanye nekhwalithi yongqimba lwefilimu. Ukuhlanzeka kwayo okuphezulu futhi kuvimbela ifilimu ukuthi ingangcoliswa yi-furnace tube material, iqinisekisa izici zikagesi neze-optical zesendlalelo sefilimu.

● Izisetshenziswa ze-ALD (Atomic Layer Deposition):

Umsebenzi: I-ALD ubuchwepheshe obungakhula amafilimu azacile kakhulu futhi afanayo. Amashubhu omlilo we-SiC ahlinzeka ngendawo yokusabela ezinzile futhi kulula ukuyihlanza kumishini ye-ALD.

Izinzuzo: Indawo ye-SiC akulula ukukhangisa izandulela zokusabela. Indawo yayo ebushelelezi kanye nokuhlanzeka okuphezulu kakhulu kulungele ukulawula ukukhula kwefilimu yezinga le-athomu, kuqinisekisa ukufana kogqinsi kwefilimu nokuphindaphindwa okuphezulu.

● Isithando somlilo esishisayo esishisayo:

Umsebenzi: Ukushisa okuphezulu kwe-annealing kuyisinyathelo esibalulekile sokuqeda ukukhubazeka kwe-wafer, ukuvula ama-dopants, kanye nokuthuthukisa izici ezibonakalayo.

Izinzuzo: Amashubhu esithandweni somlilo we-SiC angahlinzeka ngendawo ezinzile yokushisa ephezulu kakhulu ukuze asize amawafa aqedele ukulungisa i-lattice nokusebenzisa ukungcola, futhi athuthukise ukusebenza kukagesi nokuthembeka kwamadivayisi. Amandla ayo okusebenza kahle kakhulu kanye nokumelana nokushaqeka kokushisa nakho kuqinisekisa ukuthi amashubhu esithandweni aqinile ngesikhathi sokwanda nokuncipha kwezinga lokushisa.

● Ezinye izinhlelo zokusebenza zezinga lokushisa eliphezulu:

I-SiC Furnace Tube iphinde isetshenziswe kuhhavini lokuhlola izinga lokushisa eliphezulu, izithando zomlilo ezikhethekile ze-sintering, njll. ezigabeni ezihlukahlukene ze-R&D, ihlinzeka ngendawo enokwethenjelwa yokushisa okuphezulu ukuze kuthuthukiswe izinto zokwakha ze-semiconductor ezisezingeni eliphezulu.

Ukukhathazeka komsebenzisi nezixazululo

1: Ukugcinwa kwemishini njalo kanye nokuphuka kalula kwamashubhu e-quartz?

Isixazululo: I-Semixlab isebenzisa amashubhu e-ceramic e-silicon carbide anobukhulu obukhulu anokumelana nokushaqeka okushisayo, okunganciphisa kakhulu imvamisa yokulungisa kanye nezingozi zesikhathi sokuphumula.

2: Izidingo zokuhlanzeka komkhiqizo ziphezulu, ungakugwema kanjani ukungcola kwesibili?

Isixazululo: Khetha i-CVD SiC enamathelayo noma ishubhu ye-SSiC eqinile kakhulu, ukukhishwa kokungcola kwensimbi okuphansi kakhulu, ukuhlangabezana nezindinganiso zenqubo ehlanzekile kakhulu.

3: Kunzima yini ukuthenga osayizi abakhethekile noma izakhiwo zesixhumi esibonakalayo?

Isixazululo: Sisekela ukwenziwa ngokwezifiso kwemidwebo kanye nokucubungula kwesakhiwo esiyinhlanganisela (njenge-flange interfaces, amashubhu esinyathelo, ukugoba okumise okuka-L, njll.) ukuze kuhlangatshezwane nezidingo zakho ezihlukahlukene neziyinkimbinkimbi zokuhlanganiswa kwesistimu.

4: Ungasixazulula kanjani isikhathi eside sokulethwa futhi akukho siqinisekiso sangemva kokuthengisa?

Isixazululo: Njengomkhiqizi oholayo nomphakeli wezingxenye ze-SiC e-China, i-Semixlab inezinzuzo eziphelele ezilandelayo: umthamo wokukhiqiza ozinzile + ukuhlolwa kwekhwalithi eqinile + ukupakishwa kokuthekelisa + ukusekelwa kobuchwepheshe, okungaqinisekisa isikhathi sokulethwa futhi kunikeze ukwethembana kokubambisana kwesikhathi eside.

Izitolo zemikhiqizo ye-Semixlab