I-Solid SiC Carrier

I-Solid SiC Carrier ye-Semixlab isebenzisa i-crystal SiC eyodwa ehlanzekile njenge-substrate, futhi yenza ungqimba oluyisivikelo oluyinhlanganisela ye-nano-scale SiC-C ngaphezulu ngenqubo yokumboza enelungelo lobunikazi, eyakha kabusha umngcele wokusebenza wento yenethiwekhi ezingeni lamangqamuzana. Ukusebenza kwayo okuhle kakhulu kuvela esakhiweni sekristalu esiyingqayizivele se-SiC nezici zebhondi eqinile.

Izici zezinto ezibonakalayo

● Ukuzinza okuphezulu kakhulu kokushisa nokumelana nezinga lokushisa: I-SiC ibonisa ukuzinza okuhle kakhulu emazingeni okushisa aphezulu futhi ingasebenza ngokuzinza endaweni ene-oxidizing kufika ku-1600°C, futhi izinga lokushisa layo le-sublimation lingafinyelela ngisho naku-2700°C. Lokhu kwenza abathwali be-SiC babe inketho efanelekile yokukhula kwe-epitaxial yezinga eliphezulu lokushisa, ukuhlanganisa nezinye izinqubo, ezedlula kude ukubekezelelwa kwezinto ezivamile.

● I-thermal conductivity enhle kakhulu: I-thermal conductivity ye-SiC ekamelweni lokushisa iphezulu ngokufika ku-120 W/m·K, okuyiphinda izikhathi ezingu-3 kune-silicon (Si). I-thermal conductivity ephezulu iqinisekisa ukuthi i-wafer kusithwali ingathola ukusatshalaliswa kwezinga lokushisa okufanayo ezinqubweni zokushisa okuphezulu, ngaleyo ndlela iqinisekise ukufana kwekhwalithi yokukhula kongqimba lwe-epitaxial nokunciphisa ukungqubuzana nokucindezeleka.

● Amandla amahle kakhulu emishini nobulukhuni: I-SiC inobulukhuni obuphezulu kakhulu (Mohs hardness 9.0-9.5, Vickers hardness 32 GPa), isibili ngemva kwedayimane, kanye ne-Young's modulus ephezulu (440 GPa) namandla okugoba aphezulu (490 MPa). Lokhu kwenza inkampani yenethiwekhi ye-SiC imelane ngokwedlulele ekugugekeni nasekuwohlokeni phakathi komthelela wemishini kanye nokubamba okunamandla, okunweba ngempumelelo impilo yayo yesevisi.

Kungani ukhetha I-Semixlab's Solid SiC Carrier?

● I-R&D namandla okukhiqiza: I-Semixlab inezikhungo ze-R&D ezingu-2, izisekelo zokukhiqiza ezingu-2, imigqa yokukhiqiza engu-12, abasebenzi abangaphezu kuka-150, kanye nama-akhawunti okutshalwa kwezimali e-R&D angaphezu kuka-30%. Inamandla okukhiqiza amashumi ezinkulungwane zemikhiqizo ye-SiC minyaka yonke.

● Izinzuzo zobuchwepheshe: Yakha ngokuzimela imishini namafomula e-CVD, isekela i-CVDSiC ehlanzekile kakhulu, i-TaC nezinye izinto zokumboza nezinto eziqinile ze-SiC, ukulawula ukunemba kwe-CNC kungafinyelela ku-3μm, okuqukethwe komlotha kungaphansi kuka-5ppm, futhi ukusebenza komkhiqizo kuhamba phambili embonini.

● Isistimu yokuhlinzeka ephelele: I-Semixlab inomugqa ozimele we-silicon carbide synthesis synthesis kanye neplathifomu yokucubungula ye-CNC enembayo, engahlinzeka nge-Ø4" ~ Ø12" nosayizi abenziwe ngokwezifiso, isekele ukulethwa okusheshayo, futhi ivumelane nemikhiqizo yemishini evamile njenge-Veeco, i-AIXTRON, kanye Nezinto Ezisetshenziswayo.

● Ukwenza ngendlela oyifisayo kanye nesevisi yokuma okukodwa: Ngokwezidingo zamakhasimende, singahlinzeka ngezinsizakalo zenqubo egcwele kusukela ekukhethweni kwezinto ezibonakalayo, i-R&D, umshayeli wokuhlola ukuya ekukhiqizeni ngobuningi ukuze sihlangabezane nezidingo ezihlukahlukene zokukhiqiza ama-semiconductor asezingeni eliphezulu.

● Imakethe yamazwe ngamazwe kanye nesisekelo samakhasimende: I-Semixlab isungule ukubambisana kwesikhathi eside namakhasimende angaphezu kuka-30 okukhiqiza ama-wafer kanye namakhasimende ahlanganisiwe we-semiconductor ekhaya naphesheya, okuhlanganisa i-Mini LED, idivayisi yamandla ye-SiC, i-MEMS, nabakhiqizi bedivayisi ye-RF.

Inkampani yenethiwekhi ye-Solid SiC isiphenduke ukhiye osebenzisekayo emikhakheni ye-semiconductor epitaxy, ukupakisha, amadivayisi kagesi, njll. ngezakhiwo zayo zezinto ezibonakalayo ezinhle kakhulu nokusebenza kwenqubo. I-Semixlab inguzakwethu onokwethenjelwa ohlinzeka ngezixazululo zenkampani yenethiwekhi ye-SiC yekhwalithi ephezulu nesebenzayo kumakhasimende omhlaba nge-R&D yayo eqinile, amakhono okukhiqiza nokwenza ngokwezifiso.

Ukusetshenziswa okukhethekile ekukhiqizeni i-semiconductor

Ukusebenza okuhle kakhulu kwe-Solid SiC Carrier kuyenza idlale indima ebalulekile ezinqubweni zokukhiqiza ze-semiconductor ezibalulekile, ikakhulukazi ezifanele izixhumanisi ezinezidingo eziphakeme kakhulu zezinga lokushisa, ubumsulwa, ukufana nokuzinza kwemishini. Izimo zohlelo lokusebenza ezijwayelekile zimi kanje:

1. I-Epitaxy

I-MOCVD epitaxy: Isithwali se-SiC siyingxenye eyinhloko yokukhula kwe-GaN, i-GaAs, i-SiC namanye amafilimu e-semiconductor ayinhlanganisela kumishini ye-MOCVD, njenge-barrel susceptor kanye nabathwali be-pancake susceptor. I-conductivity yayo ephezulu yokushisa iqinisekisa ukufana kwezinga lokushisa ekamelweni lokuphendula, okubalulekile ekufaneni kokuqina kwefilimu, ukwakheka kanye ne-doping; ukuhlanzeka kwayo okuphezulu kanye nokungabi namakhemikhali kwamakhemikhali kugwema ngokuphumelelayo ukungcoliswa kokungcola futhi kuqinisekise izakhiwo zikagesi neze-optical zengqimba ye-epitaxial, ikakhulukazi ekwenziweni kwama-LED, ama-electronics amandla kanye namadivayisi wefrikhwensi yomsakazo.

I-SiC epitaxy: Ekwenziweni kwedivayisi yamandla we-SiC, abathwali be-SiC bayinkundla ekahle yokukhula kwe-epitaxial yama-wafers e-SiC. I-coefficient yokwandisa okushisayo ehambisana ngokuphelele neyama-SiC wafers inciphisa ngempumelelo ingcindezi ebangelwa ukushintsha kwezinga lokushisa phakathi nenqubo ye-epitaxy, ngaleyo ndlela yehlise izinga lesici futhi ithuthukise ikhwalithi ye-epitaxial layer.

I-epitaxy esekelwe ku-silicon: Ezinqubweni ezithuthukisiwe ze-silicon, abathwali be-SiC bangasetshenziswa futhi kuzinqubo ezithile ze-silicon epitaxy ezidinga ukufana okuphezulu kwezinga lokushisa kanye nezidingo zokuhlanzeka.

2. Ukuqondanisa

I-high-temperature activation annealing: Ngemva kokufakwa kwe-ion, abathwali be-SiC basetshenziswa ezinqubweni zokudonsa izinga lokushisa eliphezulu kuma-silicon noma ama-wafers e-SiC ukuze kusebenze ama-dopants afakiwe kanye nokulungisa umonakalo we-lattice. Ukuzinza kwezinga lokushisa eliphezulu kanye nekhono lokushisisa okufanayo labathwali be-SiC kuqinisekisa ukusebenza kahle kwenqubo yokudonsa kanye nobuqotho be-wafer.

Izithwali ze-RTP (i-rapy thermal annealing): Emishinini yokudonsa eshisayo esheshayo, abathwali be-SiC bangakwazi ukumelana nemijikelezo eshisayo yokushisisa nokupholisa ngokushesha futhi bagcine ukuqina kwesakhiwo, esifanele izinqubo ezithuthukisiwe ezifana nokufakwa kwe-flash annealing.

3. Ukufakwa kwe-Ion

Izithwali ze-Doping kanye nokulungisa: Abathwali be-SiC basetshenziselwa ukulungisa ama-wafers ngesikhathi sokufakelwa kwe-ion. Amandla abo emishini ephezulu kanye nokumelana nokugqoka kuqinisekisa ukuzinza ngaphansi kwebhomu le-ion beam. Ngesikhathi esifanayo, izici zabo zokukhiqiza izinhlayiyana eziphansi nazo zinciphisa ukungcoliswa ngesikhathi senqubo yokufakelwa.

4. Ezinye izinhlelo zokusebenza

Inqubo yokuhlanganisa: Kwezinye izinqubo zokunamathisela ze-ICP (i-plasma ehlanganiswe nge-inductively) noma i-PSS (i-patterned sapphire substrate) izinqubo zokunamathisela, abathwali be-SiC basetshenziswa njengezinto ezilungiswayo eziyilucwecwana noma ama-substrates ngenxa yokumelana kwazo nokugqwala kwe-plasma nezici zezinhlayiyana eziphansi.

Amashubhu/izikebhe zesithando somlilo ezihlanzekile: Kwamanye amafusi okuhlanzeka okuphezulu noma ama-oxidation, izinto ze-SiC nazo zenziwa amashubhu esithandweni somlilo noma izikebhe eziyisicwecwana ukuze zinikeze indawo yenqubo ehlanzeke ngokwedlulele.