Abstract:
Lesi sihloko sihlaziya ngokujulile umehluko oyinhloko phakathi kwe-annealing thermal annealing (RTA) kanye nokucubungula okushisayo okusheshayo (RTP), kusukela kubukhulu obuyisihlanu: incazelo, isimiso, isicelo esingokoqobo, ubudlelwano phakathi kwakho kokubili nezincomo zokukhetha, ukusiza ochwepheshe bonjiniyela be-semiconductor baqonde ukuma nezimo ezisebenzayo zalokhu okubili kuzixhumanisi zenqubo, nokuhlinzeka ngezinkomba zokwelashwa ezisezingeni eliphezulu ezingenazo ukushisa.
Ⅰ. Izincazelo Nezimiso Eziyinhloko
1.1 I-RTA (I-Rapid Thermal Annealing)
Incazelo: Inqubo yesikhathi esifushane yokudonsa izinga lokushisa eliphezulu efinyelela izinhloso ezithile zokudonsa ngesikhathi esifushane kakhulu (amasekhondi ukuya emashumini amasekhondi) ngokushisisa okusheshayo (kufika ku-100°C/isekhondi noma ngaphezulu) kanye nokupholisa.
Isimiso: Isebenzisa amazinga okushisa aphezulu ukuze iqalise ukusakazeka kokungcola, ukulungisa umonakalo wokufakelwa kwe-ion, noma ivule ama-dopants, kuyilapho igwema ukusakazeka kokungcola okweqile okubangelwa amazinga okushisa aphakeme isikhathi eside.
Izici ezibalulekile ze-RTA zifaka:
● Amazinga okushisa ashesha kakhulu nawokupholisa (≥100°C/isekhondi)
● Ukucutshungulwa kwe -wafer eyodwa
● Akukho ukusabela kwamakhemikhali okuphawulekayo—ikakhulukazi ukusabalalisa okushisayo noma ukulungiswa kwe-lattice
● Ngokuvamile isetshenziswa njengesinyathelo sokuvula ngemva kokufakwa kwe-ion
1.2 I-RTP (Ukucubungula Okushisayo Okusheshayo)
Incazelo: Igama elijwayelekile lokucubungula ukushisa okusheshayo , elihlanganisa zonke izinqubo zokushisa ezitholakala ngokushisa/ukupholisa okusheshayo, okuhlanganisa kodwa kungagcini ngokufaka i-annealing, i-oxidation, i-nitriding, i-alloying, njll.
Isimiso: Ngokulawula ngokunembile ijika lesikhathi sezinga lokushisa, lilawula ukwakheka kwezinto ezibonakalayo, izici zesixhumi esibonakalayo, noma ukusatshalaliswa kokungcola.
Izici ezibalulekile ze-RTP zifaka:
● Izinhlobo zezinqubo ezihlukene (azigcini nje ngokuhlanganisa)
● Iyakwazi ukushisisa futhi ipholise ngokushesha
● Iyakwazi ukumisa izindawo ezihlukene zomkhathi (isb., O₂, N₂, NH₃, njll.)
● Iyakwazi ukulawula ngokunembile ijika lezinga lokushisa lesikhathi
II. Case Comparison
2.1 Isibonelo se-RTA: Ukwenza kusebenze i-Anealing ngemva kokufakwa kwe-Ion
Isimo: Ekwenziweni kwe-CMOS, ngemuva kokuthi i-B⁺ itshalwe ukuze yakhe izifunda zomthombo wohlobo lwe-P, i-RTA isetshenziselwa ukwenza ama-athomu angu-B asebenze futhi kulungiswe ingilazi yekristalu.
Amapharamitha wenqubo: Izinga lokushisa elingu-100 ° C/sesibili, eligcinwe ku-1050 ° C imizuzwana emi-5, izinga lokupholisa lika-50 ° C / isekhondi.
Injongo: Ukufaka esikhundleni sezindawo ze-Si lattice ngama-athomu angu-B (isilinganiso sokwenza kusebenze > 90%) kuyilapho ukhawulela ukusabalalisa kuka-B (ukujula kwe-junction <50 nm).
2.2 Isibonelo se-RTP: I-Rapid thermal oxidation (RTO)
Isimo: Ezinqubweni ze-FinFET, i-RTP isetshenziselwa ukwakha isango le-SiO₂ lesango le-Dielectric le-ultra-thin (1–3 nm) lezinga eliphezulu le-SiO₂ endaweni ye-silicon.
Amapharamitha okucubungula: I-O₂ atmosphere, 900°C imizuzwana engu-60, okwenza ungqimba lwe-SiO₂ oluwu-2 nm obukhulu.
Injongo: Lawula ngokuqondile ukujiya kongqimba lwe-oxide ngenkathi ugwema ukuwohloka okubangelwa izinga lokushisa eliphezulu kwesakhiwo se-Fin.
| Izici | I-RTA (I-Rapid Thermal Annealing) | I-RTP (Ukucubungula Okushisayo Okusheshayo) |
| Inhloso Eyinhloko | Ukwelashwa kwe-annealing eshisayo | Ukucubungula okushisayo okujwayelekile okujwayelekile |
| Ibanga Lohlelo | Ncincile (kukhawulelwe ku-annealing) | Okubanzi (i-annealing, oxidation, i-nitriding, njll.) |
| Ibanga Lokushisa Elijwayelekile | I-600-1100 ° C | I-400-1200 ° C |
| Inqubo ye-Atmosphere | Ngokuvamile igesi ye-inert noma i-vacuum | Igesi engasebenzi, igesi oxidizing, igesi ye-nitriding, njll. |
| Amagesi ajwayelekile | N₂, Ar | O₂, NH₃, N₂, njll. |
| Izibonelo Zohlelo Olujwayelekile | Ukwelashwa kokusebenza ngemuva kokufakwa kwe-ion | Ukukhula kongqimba lwe-oxide yesango, ukusabela kwe-siliconization, njll. |
Ⅲ. Ubudlelwano Nokunqwabelana Phakathi kwe-RTA ne-RTP
I-RTA iyisethi engaphansi ye-RTP: zonke izinqubo ze-RTA zifakiwe ku-RTP, kodwa i-RTP iphinde ihlanganise nezinye izinqubo ezifana ne-oxidation ne-nitriding.
Ukuhambelana Kwezisetshenziswa: Imishini yesimanje ye-RTP ngokuvamile isekela izindlela eziningi zenqubo, inika amandla imisebenzi efana ne-RTA, i-RTO, ne-RTN ngokushintsha isofthiwe.
Ukuziphendukela Kwezobuchwepheshe: Imishini yangaphambi kwesikhathi ye-RTA yayisekela kuphela amajika okushisa alula, kuyilapho amasistimu e-RTP esizukulwane esilandelayo afaka ukulawulwa kwe-waveform eyinkimbinkimbi (njengokuhlanganisa "i-annealing ephezulu" "nokupholisa umthambeka"), efiphalisa imingcele phakathi kwakho kokubili.
Ⅳ. Indlela yokukhetha?
Ukukhethwa kwendlela yokwelapha ukushisa kuncike kakhulu enjongweni yenqubo:
| Inhloso yohlelo lokusebenza | I-RecommendedTechnology | Isizathu Sokuncoma |
| Ukwenza kusebenze i-Dopant | I-RTA | Igxile ekubangeni okushisayo ngaphandle kokubandakanya ukusabela kwamakhemikhali |
| I-Oxide noma I-Nitride Layer Growth | RTP | Ukusabela kwamakhemikhali kwenziwa ngaphansi kwezimo zomoya ezilawulwayo |
| Ukulungiswa Kwesici | I-RTA | Ukucubungula okusheshayo, kwesikhathi esifushane ngesabelomali esilawulekayo esishisayo |
| Ukusabela kweSiliconization | RTP | Ilawula izinqubo zenguquko yesigaba sokusabela kanye nokwakheka komkhathi |
| Izicelo Ze-Logic Node Esezingeni Eliphezulu | RTP | Isekela amajika okucubungula okushisayo anezinyathelo eziningi |
Isifinyezo Sezincomo:
Uma umgomo ushesha, ukufakwa kwe-thermal okwenziwe kwasendaweni (njengokwenza kusebenze ngemva kokufakwa kwe-ion), khetha i-RTA.
Uma udinga ukwenza ukwelashwa okuningana kokushisa okubandakanya ukusabela komkhathi (okufana ne-oxidation, i-nitriding, i-siliconization, njll.), i-RTP ifaneleka kakhulu.

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