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Ukuhlanzeka okuphezulu kwe-graphite okuzwakalayo okuqinile
Imininingwane Quick:
1. Amanye amagama: i-flexible graphite insulation izwakele, i-semiconductor thermal field soft feel, i-graphite izwakele.
2. Isicelo: I-thermal field insulation of semiconductor, okokusebenza kwe-photovoltaic, vacuum high pressure gas quenching furnace, i-monoclistallin silicon furnace nezinye izinto zokushisa eziphezulu.
3. Amapharamitha angumongo: ubumsulwa ≥99.99%, izinga lokushisa eliphezulu lokubekezelela 3000℃, conductivity ezishisayo 0.15-0.24W/m·K.
Incazelo
Ukuhlanzeka okuphezulu kwe-graphite okuzwakalayo okuqinile, okuyisisekelo sensimu eshisayo ye-semiconductor yesizukulwane sesithathu kanye nokukhiqizwa kwe-photovoltaic okuthuthukisiwe, umkhiqizo onamasu othuthukiswe yi-Semixlab ngokusekelwe eminyakeni engaphezu kwengu-20 yocwaningo lwezinto ezibonakalayo olusekelwe ku-carbon kanye nolwazi lwentuthuko. Ngobuchwepheshe bokuqinisa ukuqinisa kanye nenqubo ye-graphitization yezinga lokushisa eliphezulu eliphezulu kakhulu, okokusebenza kufinyelela ukuqina kwesakhiwo kanye nokuzinza kwemvelo okungenakufinyelelwa yizinto zendabuko ezizwakalayo ezithambile ngenkathi kugcinwa izakhiwo ezinhle kakhulu ezishisayo zegraphite. Inqubo yokukhiqiza iqala ngezinto zokusetshenziswa ezithuthukisiwe zomhlaba wonke, ngemuva kwe-1200 ℃ pre-carbonization ukuze kwakheke ungqimba olungahlelekile, i-phenolic resin ethuthukisiwe ephansi iyafakwa, futhi izingxenye eziyinkimbinkimbi zilungiswa ngobuchwepheshe bokucindezela be-isostatic be-80MPa. Emkhathini ovikelekile we-argon, umzimba uthola amahora angama-72 we-gradient graphitization ku-2800 ℃, okukhuthaza ukuhlelwa kabusha kwama-athomu ekhabhoni ukuze akhe uhlaka lwekristalu oluhlelekile, futhi ekugcineni luzuze ukunemba kobukhulu obungu-±0.05mm ngokusebenzisa isikhungo semishini ye-CNC ye-axis emihlanu. I-SiC gradient enamathela enogqinsi lwama-50-200μm ingakhiqizwa yi-chemical vapor deposition (CVD) ukuthuthukisa ukumelana ne-oxidation.
Ukuhlanzeka okuphezulu kwe-graphite okuzwakalayo okuqinile kubonisa ukusebenza okuhle kakhulu okubanzi endaweni eshisayo kakhulu: okuqukethwe kwayo kwekhabhoni kungu-≥99.99% futhi inani lomlotha lilawulwa ngokuqinile ngaphakathi kwe-65ppm, lihlangabezana nezidingo zokuhlanzeka kwebanga le-semiconductor; Ngisho nasemazingeni okushisa aphezulu angu-2000℃, isagcina umthamo wokuthwala we-≥3MPa, inqoba ngempumelelo inkinga yemboni yokuthi izinto ezizwakalayo ezithambile kulula ukonakala futhi ziwa ngaphansi kwezimo zokushisa eziphezulu. Ithola ukunemba okunembile kokulawula izinga lokushisa kusithando somlilo se-SiC esisodwa sokukhulisa ikristalu, ephakeme ngo-40% kunesilinganiso somkhakha, futhi kunciphisa ngempumelelo ukuminyana kokususwa kwekristalu eyodwa ngaphansi kuka-500cm⁻². Ngemuva kwemijikelezo eyi-100 yokucisha nokushisisa ukusuka ku-2000 ℃ ukuya kwezinga lokushisa legumbi, izinga lokushwabana komugqa wezinto ezibonakalayo lihlala lingaphansi kuka-0.5%, okubonisa ukuthi ukuzinza kwe-dimensional kwekhabhoni yendabuko okuzwakalayo kungaphezu kwezikhathi ezi-3.
Emkhakheni wokukhiqiza i-semiconductor yesizukulwane sesithathu, umkhiqizo usuphenduke ingxenye eyinhloko yesithando somlilo esikhulayo se-Physical vapor transfer (PVT) SiC, isakhiwo sawo esiqinisiwe singakwazi ukumelana nezinga lokushisa lasendaweni elingu-3000℃ ngaphandle kokukhahlazeka kwesakhiwo, futhi ngokuhlanganisa okukhethekile kwe-SIC-Si, izinga lokushisa le-oxidation lingakhuphuka lifinyelele ku-1800 ℃. I-vacuum degree yesithando somlilo sekristalu eyodwa izinzile ku-5 × 10-3Pa isikhathi eside.
Imininingwane
Idatha Yezobuchwepheshe_Ikhabhoni/Inhlanganisela Yekhabhoni:
| Idatha Yezobuchwepheshe - Inhlanganisela Yekhabhoni/Yekhabhoni | ||
| Index | Unit | Value |
| Ukuxinana kwenqwaba | g / cm3 | 1.50 |
| Okuqukethwe kwekhabhoni | % | ≥98.5~99.9 |
| Ash | PPM | ≤65 |
| I-Thermal conductivity (1150 ℃) | W/m·k | 10 ~ 30 |
| amandla eqine | MPA | 90 ~ 130 |
| Amandla weFlexural | MPA | 100 ~ 150 |
| Amandla anamandla | MPA | 130 ~ 170 |
| Amandla we-Shear | MPA | 50 ~ 60 |
| Amandla e-Interlaminar Shear | MPA | ≥13 |
| Ukumelana nogesi | Ω.mm2/m | 30 ~ 43 |
| Ukwanda Kokukhula Okushisayo | 106/K | 0.3 ~ 1.2 |
| Icubungula izinga lokushisa | ℃ | ≥2400℃ |
| Ikhwalithi yezempi, i-chemical vapour deposition deposition deposition deposition deposition, ingeniswa kwamanye amazwe i-Toray carbon fibre T700 yokunitha inaliti yangaphambi kokwelukiwe engu-2.5D, imininingwane yezinto ezibonakalayo: ububanzi obungaphandle obuyi-2000mm, ukujiya kodonga 8-25mm, ukuphakama 1600mm | ||
Izicelo
1. I-SiC single crystal growth Furnace (indlela ye-PVT)
Njengongqimba oluyisisekelo lokufakwa kokushisa kwazo zonke izingxenye ze-graphite crucible, ukunemba kokulawula izinga lokushisa kwe-axial ± 0.3℃/mm; I-vacuum yegumbi lokukhula igcinwe <5×10-3Pa; Ukuminyana kokususwa kwekristalu eyodwa kwehliselwe ku-<500/cm².
2. Isithando somlilo se-photovoltaic polycrystalline ingot
Imojula ephezulu yokufakwa kwe-thermal field yehlisa ukusetshenziswa kwamandla ngo-35% (uma kuqhathaniswa nezixazululo zendabuko zekhabhoni).
3. Imishini ye-semiconductor epitaxy yesizukulwane sesithathu
Ihlanganiswe negumbi lokusabela le-MOCVD ukuze kuzuzwe ukufana kwezinga lokushisa kwe-wafer engu-±1℃.
Sekela ukukhiqizwa kweshidi le-epitaxial elingu-8-inch GaN-on-SiC.
Competitive Advantage
Amandla okushisa aphezulu okuguquguquka: aphezulu kunezinga lemboni, afika ku-150MPa.
Imijikelezo yokushisa: kufika izikhathi ezingu-1000, ephakeme kakhulu kunesilinganiso semboni.
Ukusekelwa kwezinsizakalo ezenziwe ngokwezifiso ngokugcwele: kusuka kokubonakalayo kuye kokuma, okwenziwe ngezifiso kakhulu.
