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I-TaC Planetary Epi Susceptor
| Indawo Origin: | China |
| Igama Brand: | I-Semixlab |
| Inombolo Model: | I-TPES0001 |
| Certification: | ISO 9001 |
| Ubuncane Order Ubuningi: | 1pc |
| Price: | ngezifizo |
| Okufakiwe Yokuxhumana: | Ibhokisi lokuthekelisa elijwayelekile |
| Delivery Isikhathi: | 30-45days |
| Inkokhelo Imigomo: | Kuxoxiswane ngakho |
| Supply Amandla: | 200pcs ngenyanga |
Incazelo
I-Aixtron planetary disk iyingxenye esemqoka etholakala kumishini ye-metal-organic chemical vapor deposition (MOCVD), esetshenziswa kakhulukazi ekukhuleni kwamashidi e-silicon carbide (SiC) epitaxial. Isakhiwo sawo esiyinhloko samukela umklamo oyinhlanganisela we-high-purity graphite material + tantalum carbide (TaC) enamathela.
Imininingwane Quick:
1. Amanye amagama: i-Aixtron planetary disk,i-TaC coated planeetary susceptor,i-SiC Epi susceptor ye-Aixtron reactor
2. Isicelo: Ukuze uthole ukusebenza okuphezulu kwe-silicon carbide (SiC), i-gallium nitride (GaN) kanye nenye inqubo ye-epitaxial yesizukulwane sesithathu semiconductor.
3. Amapharamitha angumongo:
Isakhiwo sihlala sizinzile ku-2000 ℃ ukuze kugwenywe ukungcoliswa kokuqina kwegumbi lokusabela.
Ukumelana ngokuphumelelayo nokuguguleka kwamagesi angaphambili njenge-SiH₄ ne-HCl. Yehlisa ukonakala kwendawo ku-substrate.
I-thermal conductivity yesakhiwo esiyinhlanganisela ye-graphite +TaC iseduze naleyo ye-SiC wafer (SiC: 490 W/m·K), kunciphisa ukuhlanekezela kwe-lattice okubangelwa ukucindezeleka kokushisa.
Ubulukhuni obungaphezulu bembozwe ye-TaC bungu-<1μm, obungavimbela ukuwa kwezinhlayiya ezincane futhi kuqinisekise ikhwalithi engaphezulu ye-epitaxial layer (defect density <0.5/cm²).
Ukubuka konke komkhiqizo
I-Aixtron planetary disk iyingxenye esemqoka etholakala kumishini ye-metal-organic chemical vapor deposition (MOCVD), esetshenziswa kakhulukazi ekukhuleni kwamashidi e-silicon carbide (SiC) epitaxial. Isakhiwo sayo esiyisisekelo samukela ukwakheka okuyinhlanganisela yezinto ezicwebezelayo ze-graphite + i-tantalum carbide (TaC) enamathela:
I-Graphite substrate: ihlinzeka nge-thermal conductivity enhle kakhulu (~130 W/m·K) kanye nokuzinza kwezinga lokushisa eliphezulu (izinga lokushisa> 2000℃) ukuze kuqinisekiswe ukusatshalaliswa kwenkambu eshisayo efanayo ekamelweni lokusabela.
I-Tantalum carbide coating: Ingaphezulu legraphite limbozwe i-chemical vapor deposition (CVD) noma inqubo ye-sintered, ngokuvamile engu-30-100um obukhulu, ukwakha umgoqo wamakhemikhali ominyene.
Idizayini yenzelwe izinga lokushisa eliphezulu (1500-1700℃), elonakalisa kakhulu (i-silane, i-HCl namanye amagesi) imvelo yokukhula kwe-SiC epitaxial, ithuthukisa kakhulu inqubo yokuzinza kanye nesivuno se-wafer.
I-Tantalum carbide (TaC) ne-silicon carbide (SiC) ukuqhathanisa kokusebenza kokuhlanganisa
| I-Coating Material | I-Tantalum carbide (TaC). | I-Silicon carbide (i-SiC) yokumboza |
| Iphuzu lokuxuba | Iphoyinti lokuncibilika 3880 ℃ (umkhawulo wokushisa ophakeme) | Iphoyinti lokuncibilika 2700 ℃ (kulula ukubola emazingeni okushisa aphezulu) |
| I-coefficient yokwandisa ukushisa | I-Thermal Expansion Coefficient 6.3×10⁻⁶/K (ifanelana kangcono negraphite) | 4.5×10⁻⁶/K (kulula ukuqhekeka ngenxa yokungafani kokushisa) |
| Ukumelana ne-silicon vapor corrosion | Ukumelana okuhle kakhulu ne-silicon vapor corrosion (i-TaC ephansi ne-Si reactivity) | impofu (emazingeni okushisa aphezulu i-SiC iphendula ne-Si ukuze yakhe isigaba segesi esingu-Si₂C) |
| Ingozi yokungcola kwezinhlayiya | Ingozi ephansi kakhulu yokungcoliswa kwezinhlayiyana (ukugqoka okuminyene ngaphandle kwama-pores) | Okuphezulu (ukunamathela kujwayele ukuxebuka kwendawo) |
| Ukuphila konke | Impilo yesevisi > amahora angu-5000 (umjikelezo wesondlo owandisiwe ngaphezu kuka-50%) | Mayelana namahora angu-2000-3000 |
Ukuhambisana kokukhiqiza
Ijwayelane ne-Aixtron G5 WW C kanye neplathifomu ye-Prophet, ingathwala ama-wafers angu-6/8-intshi anomthamo> wama-wafers angu-30/inqwaba.
Inani lobuchwepheshe kanye nokubaluleka komkhakha
I-Graphite + tantalum carbide coated planetary susceptor ixazulula inkinga yebhodlela le-SiC yendabuko enqubweni yokushisa ephezulu yesikhathi eside:
Ukuthuthukisa izindleko: nwebisa umjikelezo wokushintsha izinto ezisetshenziswayo futhi unciphise izindleko ze-epitaxial zesiqephu esisodwa ngaphezu kuka-20%;
Ukuthuthukiswa kwesivuno: nciphisa ukungcoliswa kwezinhlayiyana kanye nomphumela wendawo yokushisa, futhi ukhuthaze isivuno seshidi le-epitaxial ukuthi lidlule u-95%;
Ukunwetshwa kwewindi lenqubo: kusekela amazinga okukhula aphezulu (> 50μm/h) nezingqimba ze-epitaxial ezijiyile.
Njengoba umthamo we-SiC womhlaba wonke uthuthukiswa waba amayintshi angu-8, lobu buchwepheshe buzoba indlela ebalulekile yokunqamula ibhodlelaneck ye-epitaxial consistency.
Imininingwane
| Izakhiwo ezibonakalayo ze-TaC coating | |
| Ubuningi | 14.3 (g/cm³) |
| Ukukhipha umoya okukhethekile | 0.3 |
| I-coefficient yokwandisa ukushisa | 6.3 10-6/K |
| Ukuqina (HK) | 2000 HP |
| Resistance | 1×10-5 Ohm*cm |
| Ukuzinza Thermal | <2500 ℃ |
| Usayizi we-graphite uyashintsha | -10 ~ 20um |
| Ukuqina kwe-coating | ≥20um inani elijwayelekile (35um±10um) |
| Ukuqhuba kwe-thermal | 9-22(W/m·K) |
| Izakhiwo zomzimba ze-isostatic graphite | ||
| Property | Unit | Value ejwayelekile |
| Ukuxineka kwenqwaba | g/cm³ | 1.83 |
| ubulukhuni | I-HSD | 58 |
| Ukubuyisela kagesi | μΩ.m | 10 |
| Amandla weFlexural | MPA | 47 |
| Amandla Okucindezelayo | MPA | 103 |
| Amandla Amandla | MPA | 31 |
| I-Modulus Encane | I-GPa | 11.8 |
| Ukunwetshwa kwe-Thermal(CTE) | 10-6K-1 | 4.6 |
| I-Thermal Conductivity | W·m-1·K-1 | 130 |
| Usayizi Wokusanhlamvu Omaphakathi | μm | 8-10 |
Izicelo
I-epitaxy yedivayisi yamandla e-silicon carbide
Ilungele ukukhula kwe-epitaxial kwe-4H-SiC okulinganayo, okusetshenziselwa ukukhiqiza amadivayisi ane-voltage ephezulu ye-MOSFET kanye ne-IGBT ngaphezu kwe-1200V.
Isidingo sezimoto ezintsha zamandla, ama-photovoltaic inverters, ezokuthutha ngololiwe kanye nezinye izinkambu sesikhulile.
Ukuthuthukiswa kwe-semiconductor yesizukulwane sesithathu
Isekela inqubo ye-GaN-on-SiC ye-heteroepitaxy yamadivayisi we-5G RF kanye nama-millimeter wave communication chips.
Competitive Advantage
Isifinyezo sezinzuzo ezibalulekile:
Ukufakwa kwe-TaC kuphakeme kunokwejwayelekile kwe-SiC ngokwemibandela yokumelana nokugqwala ezingeni lokushisa eliphezulu, ukufanisa okushisayo nempilo ende, kulungele ikakhulukazi imvelo yokunothisa umhwamuko we-silicon ekukhuleni kwe-SiC epitaxial.
Ukumelana nokushisa okukhulu:
Isakhiwo sihlala sizinzile ku-2000 ℃ ukuze kugwenywe ukungcoliswa kokuqina kwegumbi lokusabela.
Ukumelana kwamakhemikhali:
Ukumelana ngokuphumelelayo nokuguguleka kwamagesi angaphambili njenge-SiH₄ ne-HCl. Yehlisa ukonakala kwendawo ku-substrate.
Ukufana kwenkambu eshisayo:
I-thermal conductivity yesakhiwo esiyinhlanganisela ye-graphite +TaC iseduze naleyo ye-SiC wafer (SiC: 490 W/m·K), kunciphisa ukuhlanekezela kwe-lattice okubangelwa ukucindezeleka kokushisa.
Okuphumayo kokungcoliswa okuphansi:
Ubulukhuni obungaphezulu bembozwe ye-TaC bungu-<1μm, obungavimbela ukuwa kwezinhlayiya ezincane futhi kuqinisekise ikhwalithi engaphezulu ye-epitaxial layer (defect density <0.5/cm²).
