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I-TaC inamethe izingxenye zenyanga eyingxenye ye-LPE
Imininingwane Quick:
1. Amanye amagama: Ingxenye ye-graphite ehlanganiswe ne-TaC,i-CVD tantalum carbide evalwe ngesisetshenziswa se-SiC epitaxy.
2. Isicelo: SiC epitaxy graphite spare part,SiC epitaxial ukukhula okufana MOCVD,LPE.
3. Izici: I-Tantalum carbide (TaC) inephuzu lokuncibilika elifinyelela ku-3880°C. Ingasebenza isikhathi eside ekushiseni kuka-2000 degrees Celsius.
Incazelo
Ukubuka konke komkhiqizo
Izingxenye ze-Tantalum carbide (TaC) ezinamekwe nge-halfmoon ziyingxenye ebalulekile edizayinelwe okokusebenza kwe-silicon carbide (SiC) epitaxial, njengemishini ye-LPE, ukuvikela amagumbi okusabela kanye nokwenza ngcono ukuqina kwenqubo kumazinga okushisa aphezulu, izindawo ezibolayo. Uma kuqhathaniswa nezigqoko zendabuko ze-silicon carbide (SiC), i-tantalum carbide iyisixazululo esiyinhloko sokuthuthukiswa kwesizukulwane esisha semishini ye-semiconductor epitaxial ngenxa yokuphikiswa kwayo okuhle kakhulu kokushisa okuphezulu, ukungabi namandla kwamakhemikhali kanye nokuzinza kokushisa.
Imininingwane
| Izakhiwo ezibonakalayo ze-TaC coating | |
| Ubuningi | 14.3 (g/cm³) |
| Ukukhipha umoya okukhethekile | 0.3 |
| I-coefficient yokwandisa ukushisa | 6.3 10-6/K |
| Ukuqina (HK) | 2000 HP |
| Resistance | 1 × 10-5 Om*cm |
| Ukuzinza Thermal | <2500 ℃ |
| Usayizi we-graphite uyashintsha | -10 ~ 20um |
| Ukuqina kwe-coating | ≥20um inani elijwayelekile (35um±10um) |
Izicelo
Isimo sohlelo lokusebenza kanye nenani
Izingxenye ze-Tantalum carbide ezihlanganiswe nengxenye yenyanga zisetshenziswa kakhulu kulezi zimo ezilandelayo ezibalulekile:
Imishini yokukhula ye-SiC epitaxial: ku-LPE (i-liquid phase epitaxial), i-CVD (i-chemical vapor deposition) nezinye izinqubo, njengengxenye yokuvikela yekamelo lokusabela, ukuqinisekisa ukufana okuphezulu kokushisa kanye nokuvumelana kwenqubo.
Ukukhiqizwa kwe-semiconductor yesizukulwane sesithathu: kulungele ukukhiqizwa kwezingqimba ze-wide band gap semiconductor epitaxial ezifana ne-silicon carbide (SiC) ne-gallium nitride (GaN), ukuze kuhlangatshezwane nezidingo zamashidi e-epitaxial ekhwalithi ephezulu ezimotweni zikagesi, ezokuxhumana ze-5G, namadivayisi we-aerospace.
Ukuqhathanisa ne-silicon carbide coating yendabuko
| I-Tantalum carbide (TaC). | Isembozo se-silicon carbide (SiC) yendabuko |
| Izinga lokushisa eliphezulu elibekezeleleka >2000°C | ~ 1600°C |
| Ukumelana nokushaqeka okuhle kakhulu kwe-thermal | Izinga lokugqwala kwamakhemikhali eliphansi (indawo engenzi lutho) liphezulu (kulula ukusabela nge-Cl/H₂) |
| Izinga lokushisa eliphezulu elibekezeleleka >2000°C | Ukuphila kwesevisi kunwetshwa izikhathi ezingu-2-3 ezivamile |
Ukufezeka kobuchwepheshe kanye nenqubo emisha
I-tantalum carbide coating ilungiswa yi-chemical vapor deposition (CVD) yokuqala noma inqubo ye-physical vapor deposition (PVD), iqinisekisa ukunamathela okuminyene ngaphandle kwamaphutha kanye nokuqina okufanayo nokulawulekayo (imvamisa engu-50μm). Ngezidingo ezikhethekile zemishini ye-semiconductor, ubuchwepheshe be-gradient doping bungasetshenziswa futhi ukukhulisa ukunamathela phakathi kokunamathela ne-substrate, futhi kuthuthukiswe ukumelana nokukhathala okushisayo.
Competitive Advantage
Izinzuzo eziyinhloko ze-tantalum carbide coating
Ukuzinza okuhle kakhulu emazingeni okushisa aphezulu:
I-Tantalum carbide (TaC) inendawo yokuncibilika efinyelela ku-3880°C (iphezulu kakhulu kune-silicon carbide's 2700°C) futhi igcina ubuqotho besakhiwo emazingeni okushisa angaphezu kuka-1800°C. Lesi sici siyenza ibe yinhle kakhulu ezinqubweni zokushisa eziphakeme kakhulu zokukhula kwe-SiC epitaxial (njenge-MOCVD, LPE), igwema ukwehluleka kokumboza ngenxa yokucindezeleka okushisayo noma ukuguquka kwesigaba.
Inertness yamakhemikhali enhle kakhulu:
Enqubweni ye-SiC epitaxy, kuvame ukuba namagesi asebenzayo aqukethe i-silicon (Si), i-hydrogen (H₂) ne-halogen (Cl) ekamelweni lokuphendula. Ukumelana nokugqwala kwe-tantalum carbide enamathela kumagesi anjalo kungcono kakhulu kunaleyo ye-silicon carbide, enganciphisa ngempumelelo ukusabela ohlangothini phakathi kwe-coating kanye negesi yokusabela, ngaleyo ndlela kunciphise ingozi yokungcoliswa kwezinhlayiyana futhi kuthuthukise ikhwalithi ye-epitaxial layer.
Ukufanisa i-coefficient yokwandisa okushisayo okuphansi:
I-thermal expansion coefficient ye-tantalum carbide (~6.3×10⁻⁶/K) iseduze naleyo ye-graphite substrate (~4.2×10⁻⁶/K), enganciphisa ukucindezelwa kwesixhumi esibonakalayo esibangelwa ukuhamba ngebhayisikili okushisayo, igweme ukuqhekeka noma ukuxebuka kwentonga, futhi inwebe impilo yesevisi yengxenye.
Yehlisa izindleko zokulungisa futhi ukhuphule umkhiqizo:
Izembatho ze-SIC zomdabu kulula uku-oxidize noma ukusabela ngamagesi enqubo emazingeni okushisa aphezulu, okudinga isikhathi sokuphumula esivamile sokulungiswa. Ukuqina koqweqwe lwe-tantalum carbide kunganweba kakhulu umjikelezo wokulungisa, kunciphise isikhathi sokuphelelwa yisikhathi kwemishini, futhi kunciphise izindleko zizonke ngaphezu kwama-30%.
