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I-CVD SiC enamathela izingxenye ze-graphite eziyisigamu senyanga
Imininingwane Quick:
1. Amanye amagama: Izingxenye zenyanga ezimbozwe nge-graphite uhhafu wenyanga, i-epitaxial furnace flow guide, i-SiC epitaxial graphite susceptor.
2. Isicelo: Lungiselela ukugeleza kwegesi, ukulawula insimu eshisayo kanye nokufana kokusabela esithandweni somlilo se-SiC epitaxial, i-SiC epi-layer growth susceptor.
3. Imingcele eyinhloko: ubumsulwa ≥99.99995%, ukumelana nezinga lokushisa 1600 ° C, conductivity ezishisayo 300W/m·K.
Incazelo
I-Semixlab ihlinzeka ngemakethe ngezingxenye ezinhle kakhulu ze-CVD SiC zokuhlanganisa izingxenye ze-graphite ze-Half-moon njengengxenye eyisisekelo yokwesekwa kwegumbi lokusabela. Ngokuklanywa okusha okuphindwe kabili kwezinto nezakhiwo, kunikeza indawo yenqubo enezinga lokushisa eliphezulu, inertia yamakhemikhali ephezulu kanye nengozi ephansi yokungcola yokukhula kwe-SiC epitaxial. Sekuyinto esetshenziswayo ukhiye ukugqobhoza ibhodlela lokukhiqiza ngobuningi bamashidi e-epitaxial anosayizi omkhulu futhi anesici esiphansi.
Emgogodleni wokwenziwa kwe-semiconductor chip, ukuzinza kwenqubo yokukhula kwe-epitaxial kunquma ngokuqondile ukusebenza kanye nesivuno sedivayisi. I-CVD SiC enamathela Izingxenye ze-graphite eziyingxenye yenyanga, njengezinto ezisetshenziswayo zokuphatha ama-wafers emishinini ye-epitaxial, ngokusebenzisa ukuphumelela kobuchwepheshe bezinto ezibonakalayo nokucubungula ukunemba, Ixazulula inkinga yokulahleka okusheshayo nokungcoliswa kwemihlangano evamile ye-graphite kumazinga okushisa aphezulu (1200-1800 ℃) kanye negesi egqwala kakhulu.4/C3H8/H2. Ingxenye yenziwe nge-high-purity isostatic ecindezelwe i-graphite substrate ye-SGL ene-50μm eminyene ye-silicon carbide enamathela phezu kwenqubo ye-chemical vapor deposition (CVD), ehlanganisa ukushisa okuphezulu kwe-graphite nokumelana okwedlulele kwezinga lokushisa kwe-silicon carbide. Ijiyomethri yayo eyingqayizivele enesigamu senyanga (i-arc engu-180° ±5°, ububanzi bangaphandle bemishini ye-intshi engu-4/6/8) ithuthukisa ukugqin Ukuminyana kwesici kwesendlalelo se-epitaxial kwehliswa kube ngaphansi kuka-0.05cm-2.
Ubukhulu:
6 intshi, 8 intshi, 12 intshi.
Imininingwane
| Izakhiwo ezibonakalayo eziyisisekelo ze-CVD SiC coating | |
| Property | Value ejwayelekile |
| Isakhiwo Sekristalu | I-FCC β isigaba se-polycrystalline, ikakhulukazi (111) eqondiswe |
| Ubuningi | 3.21 g / cm³ |
| ubulukhuni | 2500 Vickers ubulukhuni (500g umthwalo) |
| Ubukhulu Bokusanhlamvu | 2 ~ 10μm |
| I-Chemical Purity | 99.99995% |
| Amandla Okushisa | 640 J·kg-1·K-1 |
| I-Sublimation Temperature | 2700 ℃ |
| Amandla weFlexural | 415 MPa RT 4-iphoyinti |
| Encane Modulus | 430 Gpa 4pt ukugoba, 1300℃ |
| I-Thermal Conductivity | 300Wm-1K-1 |
| Ukunwetshwa kwe-Thermal(CTE) | 4.5 × 10-6K-1 |
Izicelo
I-SiC epitaxial layer ukukhula kwe-graphite susceptor.
I-Gas inlet diversion kanye nokulawula insimu eshisayo ku-SiC epitaxial growth furnace.
Njengamanje, ubuchwepheshe busetshenziswe kulayini omkhulu wokukhiqiza we-silicon wafer epitaxy wabakhiqizi abahamba phambili be-semiconductor e-China, okukhuthaza isivuno esimaphakathi samadivayisi we-SiC MOSFET sisuka ku-90% siye ku-98%, futhi kunciphisa izindleko ze-epitaxy zesithando somlilo esisodwa ngo-40%. Ngokuzayo, ngokusheshisa kwenqubo yokukhiqiza i-wafer ye-SiC engu-8-intshi, ukusungulwa okusha okuhlanganisiwe kwe-gradient composite coating (SiC/Si₃ N₄) kanye nemojula yokuphatha okushisayo okuhlakaniphile kuzothuthukisa ingxenye ukuze idlale inani elibalulekile lembonini ekusetshenzisweni kwamandla kagesi we-ultra-high njenge-aerospace kanye nokushayela kukagesi wemoto yamandla entsha.
Competitive Advantage
Ukusebenza okuhle:
Ekusetshenzisweni okungokoqobo kokukhula kwe-SiC epitaxial, ingxenye ibonisa izinzuzo zokusebenza eziningi kakhulu kunezinto zendabuko: i-silicon carbide enamathela umthamo womjikelezo wokushaqeka oshisayo izikhathi ezingaphezu kwezingu-1000 (izinga lokushisa legumbi kuya ku-1800 ℃ ukushintsha okungazelelwe), impilo yesevisi eqhubekayo engaphezu kwamahora angu-2000 (uma kuqhathaniswa ne-graphite engahlanganisiwe izikhathi ezi-5). Ngaphezu kwalokho, i-coefficient yokwandisa okushisayo (4.5×10-6/K) ifaniswe kakhulu ne-graphite substrate (4.8×10-6/K), egwema ngempumelelo ukuqhekeka kokumboza kanye nokuchitheka kwezinhlayiyana okubangelwa ukucindezeleka kwezinga lokushisa eliphezulu, futhi iqinisekisa ubungozi obungekho bokungcola esithandweni sokukhulisa i-epitaxial.
Idizayini yesakhiwo esinembayo: Isakhiwo somhlahlandlela oyingxenye yenyanga silungiselela ukusatshalaliswa kwegesi, sinciphisa isiyaluyalu kanye nokushisisa ngokweqile kwendawo.
Ukuzijwayeza kwemvelo okwedlulele: I-β-SiC enamathelayo imelana ne-oxidation yokushisa ephezulu kanye nokuguguleka kwe-plasma, futhi ukuphila kwayo kunwetshwa izikhathi ezingaphezu kwezingu-3.
Ukufana kwenkambu eshisayo: ukuqhutshwa kwe-thermal 300W/m·K, i-CTE kanye nokufana kwe-graphite substrate, gwema ukuqhekeka kwengcindezi yokushisa.
Isevisi yenqubo egcwele: ukusekela ukucutshungulwa kwe-substrate, ukufakwa kwe-coating, ukuhlolwa kokusebenza kokulethwa kokuma okukodwa.
