I-Porous Graphite Yokukhula kwe-SiC Crystal

Embonini yokukhiqiza i-semiconductor, i-porous graphite isiphenduke into ebaluleke kakhulu yekhabhoni ethuthukisiwe ngenxa yezakhiwo zayo ezihlukile zomzimba namakhemikhali. I-Semixlab izibophezele ekuhlinzekeni ngemikhiqizo yekhwalithi ephezulu ye-porous graphite ukuze ihlangabezane nezidingo zakho zohlelo lokusebenza ezindaweni ezinokhahlo.

Izakhiwo Eziyisisekelo Zomzimba Ze-Porous Graphite

I-graphite ene-porous isekelwe ezintweni ezihlanzekile ze-graphite futhi icutshungulwa kusetshenziswa amasu athuthukile ukuze kwakhiwe isakhiwo esinezimbotshana ezinesakhiwo esifanayo kanye ne-porosity elawulekayo. Izakhiwo zayo ezibonakalayo eziyinhloko zihlanganisa:

● Ukuhlanzeka Okuphezulu: Okuqukethwe kwekhabhoni kufika ku-99.9%, namazinga okungcola aphansi kakhulu.

● Ukungangeni Kwamakhemikhali Okuhle Kakhulu: Kuhlala kuzinzile ngisho nangaphansi kwamazinga okushisa adlulele kanye nomoya odlayo.

● I-Lower Thermal Conductivity: Ibonisa ukusebenza okuvelele kokufakwa kwe-thermal ezindaweni ezinezinga lokushisa eliphezulu.

● I-Porosity Elawulwayo: Isekela ukwenziwa ngokwezifiso kosayizi abahlukahlukene bezimbotshana, ngokungena kwegesi okuzinzile nokulungisekayo.

● Ukuzinza Kwe-Thermal: Ingasebenza ngokuzinzile ngaphansi kwezimo ezimbi kakhulu ezingaphezu kuka-2000°C.

Lezi zakhiwo zenza i-graphite ene-porous ibe yinketho efanelekile yezinhlelo zensimu eshisayo, izakhi zokufakelwa, kanye nezingxenye zokusabalalisa igesi, ikakhulukazi kuma-SiC single crystal furnaces, lapho izinzuzo zayo zokusebenza zigqama kakhulu.

Iqhaza Eliyinhloko Le-Porous Graphite ku-Silicon Carbide Single Crystal Growth Furnaces

Ezithandweni ezithuthukisiwe ze-silicon carbide (SiC) zokukhulisa ikristalu eyodwa, i-porous graphite idlala indima ebalulekile, nemisebenzi yayo emithathu ebalulekile ebaluleke kakhulu ekukhuleni ngempumelelo kwamakristalu e-SiC ekhwalithi ephezulu:

Ukushisa okuphansi kwe-thermal kunikeza ukwahlukanisa okuhle kakhulu, ukugcina izinga lokushisa eliphezulu ngaphakathi kwesithando somlilo kanye nokusungula ama-gradients okushisa anembile.

Ngesikhathi sokukhula kwekristalu ye-SiC, isithando somlilo kufanele sigcine amazinga okushisa aphezulu kakhulu afinyelela ku-2000 ° C noma ngaphezulu. I-graphite enezimbotshana, ne-thermal conductivity ephansi kakhulu, inciphisa ukulahlekelwa ukushisa, iqinisekise ukusatshalaliswa kokushisa okuzinzile ngaphakathi kwegumbi lomlilo. Okubaluleke nakakhulu, ngokuklama ngokunembile ukuma kwejiyomethri nokusatshalaliswa kwe-pore kwezingxenye ze-porous graphite insulation insulation, kungenzeka ukwakha ngobuhlakani futhi kugcinwe izinga lokushisa elinembile elibalulekile ekukhuleni kwekristalu ngaphakathi kwesithando somlilo. Le gradient isebenza njengamandla okushayela umhwamuko we-SiC futhi yayala ukukhula kwekristalu; ngisho nokuguquguquka okuncane kwezinga lokushisa kungaholela ekulimaleni kwekristalu. Ngakho-ke, ukufakwa okuphansi kwe-thermal conductivity graphite kuyisisekelo sokuqinisekisa ukuzinza okushisayo kwemvelo yokukhula kwekristalu ye-SiC.

Izici zayo zokuhlanzeka okuphezulu zinikeza ukungabi namakhemikhali okuhle kakhulu, okuyenza ikwazi ukumelana nokugqwala kwezinga lokushisa eliphezulu futhi ivikele umzimba wesithando somlilo, ngaleyo ndlela iqinisekise indawo yokukhula ehlanzekile.

Indawo yokukhula yamakristalu e-SiC eyodwa idinga ukuhlanzeka okuphezulu kakhulu. Amazinga okushisa aphezulu ngaphakathi kwesithando somlilo awagcini nje ngokusheshisa ukusabela kodwa angase futhi abangele ukuwohloka kwempahla noma ukwethulwa kokungcola. I-graphite ecwebezelayo ye-Semixlab ephezulu (i-High Purity Porous Graphite) ibonisa ukungabi namakhemikhali okukhethekile, okusho ukuthi ayisebenzi ngemithombo ye-silicon, imithombo yekhabhoni, noma umoya ovikelayo (ofana ne-argon) odingekayo ekukhuleni kwe-SiC, ngisho namazinga okushisa aphakeme kakhulu. Lokhu kumelana nokugqwala kwezinga lokushisa eliphezulu kuvikela ngokuphumelelayo ukwakheka kwesithando somlilo esibizayo kanye nezingxenye zangaphakathi ekugugulekeni, kuqeda ngokuyisisekelo ingozi yokwethulwa kokungcola. Indawo yokukhula ehlanzekile, engangcoli iyisidingo sokuqala sokukhiqiza amakristalu ekhwalithi ephezulu e-silicon carbide.

Umsebenzi wayo oyinhloko futhi oyingqayizivele utholakala ekungeneni kwawo okulawulwayo, okuvumela amagesi (amagesi enkampani yenethiwekhi kanye nemikhiqizo yokusabela) ukuthi ahlakazeke ngendlela efanayo futhi azinzile ngempahla, afinyelele ibhalansi eguquguqukayo yezimo eziphansi zokucindezela ngaphakathi kwesithando somlilo. Lokhu kuvimbela izinguquko zengcindezi engazelelwe kanye nesiyaluyalu, ngaleyo ndlela kuqinisekisa ukuthuthwa okuzinzile kwezinto zesigaba somhwamuko we-SiC kanye nokukhula kwekhwalithi ephezulu kusixhumi esibonakalayo sekristalu.

Lona umsebenzi obaluleke kakhulu futhi ongenakushintshwa we-graphite enezimbotshana ekukhuleni kwekristalu ye-SiC. Amakristalu e-SiC avame ukukhuliswa kusetshenziswa indlela ye-sublimation, ehlanganisa ukuthutha umhwamuko we-silicon-carbon uwuyise endaweni yekristalu yembewu ngegesi ethwala. Ukungena okulawulwayo okuyingqayizivele kwe-porous graphite kusho ukuthi isakhiwo sayo se-microporous esixhumene sivumela igesi yenethiwekhi (njenge-argon) kanye nemikhiqizo yokusabela (njenge-Si ne-C vapor engaphenduliwe) ukuthi isakazeke ngenani elilinganayo nelizinzile. Lokhu kugeleza kwegesi okulawulwayo kubalulekile njengoba kwenza:

1. Finyelela ukulingana okuguquguqukayo endaweni enengcindezi ephansi ngaphakathi kwesithando somlilo: Gcina indawo enengcindezi ephansi ezinzile ngaphakathi kwegumbi lomlilo ukuze uvimbele ukwakheka kwezindawo zokucindezela okuphezulu noma okunegethivu, okuyizimo ezikahle zokuthutha umhwamuko we-SiC.

2. Vimbela izinguquko zengcindezi engazelelwe kanye nesiyaluyalu: Ukugeleza kwegesi okungalawuleki kungase kubangele izinguquko ezingazelelwe ekucindezelweni kwesithando somlilo noma isiphithiphithi, kuphazamise kakhulu indlela yokudlulisa umhwamuko we-SiC, okuholela ekudluliseni okungalingani, futhi ngaleyo ndlela kuthinte ukukhula okufanayo kanye nekhwalithi yekristalu.

3. Qinisekisa ukuthuthwa okuzinzile kwezinto zesigaba somhwamuko we-SiC: Ukusatshalaliswa kwegesi okuzinzile kuqinisekisa ukuthi izandulela ze-SiC (i-silicon ne-carbon vapor) zingafinyelela ngokuqhubekayo nangokufana endaweni yekristalu yembewu, kugwenywe izinkinga ezifana nokungatholakali okwanele noma ukunqwabelana ngokweqile.

4. Ukukhuthaza ukukhula kokusebenzelana kwekristalu kwekhwalithi ephezulu: Ukudluliswa kwesigaba somhwamuko okuzinzile kuyisisekelo sokwenza izixhumanisi zekristalu eziyisicaba, ezingenasici. Ngokulawula kahle ukusakazeka kwegesi nge-graphite enezimbotshana, amaphutha anjengokususwa kanye nama-microtubes ngesikhathi sokukhula kwekristalu angacindezelwa ngempumelelo, ekugcineni akhiphe amakristalu awodwa e-SiC aphezulu, anosayizi omkhulu.

Izinzuzo zomkhiqizo we-Porous Graphite we-Semixlab kanye neziqinisekiso zesevisi

1. Ukusekelwa kokucaciswa okuningi kanye nezinsizakalo zokwenza ngokwezifiso

I-Semixlab ingenza ngokwezifiso imikhiqizo ye-graphite enezimbobo ngokuya ngezidingo zamakhasimende, kufaka phakathi kodwa kungagcini nje:

● Izitini ze-insulation, izembozo zokushisa ezishisayo

● Amapuleti okusabalalisa igesi, amabhulokhi angangeneka

● Izingxenye zensimu ye-thermal ekhethekile (ukwenziwa ngokwezifiso kuyatholakala ngokusekelwe emidwebeni enikeziwe)

● Ibanga lokwenza ngokwezifiso: I-Porosity 10% -80%, ukujiya ±0.1mm ukulawula ukunemba

2. Ukulethwa Okusheshayo kanye Nokupakishwa Okusezingeni Eliphezulu

Sinikezela ngohlelo lwe-supply chain oluguquguqukayo nolusebenzayo:

● Umjikelezo wokulethwa: Ukucaciswa okujwayelekile kuthunyelwa phakathi kwezinsuku zokusebenza ezingu-5-7; izingxenye ngokwezifiso zilethwe phakathi kwezinsuku eziyi-10-15 ngemuva kokuqinisekiswa komdwebo.

● Amazinga okupakisha: Ukupakisha okungavimbeli uthuli + ukuvikelwa kwe-cushioning yezendlalelo eziningi ukuze kuqinisekiswe ukuthutha okuphephile nokungangcoli.

Ukukhetha i-graphite e-Porous ye-Semixlab kusho ukuthi ukhetha ikhwalithi ephezulu, ukwenza ngokwezifiso okuchwepheshile, kanye nesevisi eyingqayizivele. Sibheke ngabomvu ukubambisana nawe ukuze sikunikeze izisombululo zezinto ezithembekile zezinhlelo zakho zokusebenza zobuchwepheshe ezisezingeni eliphezulu.