EN 
EN
DA
NL
FI
FR
DE
IT
JA
KO
NO
PL
PT
RO
RU
ES
SV
TL
ID
SK
UK
VI
TH
TR
FA
BE
LA
UZ
I-CVD SiC Coating Baffle
I-CVD SiC Coating Baffle evela ku-Semixlab iyisakhi se-reactor sangaphakathi esisebenza kahle kakhulu esenzelwe izinhlelo zokusebenza ze-semiconductor heteroepitaxy ezithuthukisiwe. Yakhelwe izinhlelo ze-GaN, SiC, kanye ne-compound semiconductor epitaxy, le baffle ene-SiC-coated ithuthukisa ukusatshalaliswa kokugeleza kwegesi, izinzisa amasimu okushisa, futhi inciphisa ukukhiqizwa kwezinhlayiya ngaphakathi kwe-MOCVD kanye ne-CVD reactors. Ubuso bayo obukhulu, obungenazo izimbobo be-SiC bumelana nokuguguleka okuvela kumakhemikhali angaphambili anolaka, okwandisa kakhulu isikhathi sokuphila kwengxenye futhi kunciphisa imvamisa yokugcinwa. Siyakwamukela umbuzo wakho.
Incazelo
Ekukhiqizweni kwe-semiconductor okuthuthukisiwe, ukuzinza kwenqubo ngaphakathi kwe-epitaxial reactors kunquma ngqo ukusebenza kwedivayisi, isivuno, kanye nokuthembeka kwesikhathi eside. I-CVD SiC Coating Baffle ye-Semixlab iyisakhi segumbi esisebenza kahle kakhulu esenzelwe izindawo ezikhula kahle ze-heteroepitaxial, kufaka phakathi i-silicon (Si), i-silicon carbide (SiC), kanye nezinqubo ze-compound semiconductor. Ngokuhlanganisa ukwakheka kwesakhiwo okunembile nobuchwepheshe bokumboza i-silicon carbide ye-high-purity chemical vapor deposition (CVD), lo mkhiqizo unikeza ukulawulwa kokugeleza kwegesi okumangalisayo, ukulawulwa kwezinhlayiya, kanye nokuzinza kwensimu yokushisa kwamapulatifomu e-epitaxial esizukulwane esilandelayo.
Ngaphakathi kwama-reactor epitaxial, ikakhulukazi kuma-reactor e-MOCVD noma e-CVD asebenza ngaphezu kuka-1000°C kanye nasezinhlelweni ze-SiC epitaxy ezingaphezu kuka-1600°C, ukuguquguquka kwegesi yangaphakathi kanye nokufana kokushisa kuthinta kakhulu ukulawulwa kobukhulu besendlalelo, ukuhambisana kokusatshalaliswa kwe-dopant, kanye nobuningi be-crystal defect. Ama-baffles ambozwe yi-CVD SiC asebenza njengokuphathwa kokugeleza okubalulekile kanye nezingxenye ezivikelayo ngaphakathi kwamakamelo enqubo. Aphinda akhe futhi azinzise ukugeleza kwegesi yenqubo, anciphise ukuxokozela eduze kwemiphetho ye-wafer, futhi akhuthaze ukusatshalaliswa okufanayo kwe-precursor kuzo zonke izingxenye ezinkulu.
Ngale kokulawulwa kokugeleza, ukucindezela ukukhiqizwa kwezinhlayiya kubalulekile ekufinyeleleni ukukhiqizwa kwe-epitaxial okukhiqiza kakhulu. Ukuqhekeka, ukuqhekeka okuncane, kanye nokungcola okuvela ezintweni zegumbi ezivamile kuletha izinhlayiya ze-submicron ezilimaza kakhulu ukusebenza kwedivayisi. Ama-baffles e-CVD SiC ahlanganiswe yi-Semixlab asebenzisa i-CVD SiC ehlanzekile kakhulu, enikeza ukuminyana okungavamile, ubulukhuni, kanye nokungangeni kwamakhemikhali. Lokhu kuhlanganiswa kwakha ubuso obuqinile, obungenazimbobo obumelana nokuguguleka yigesi yenqubo ebolayo (HCl, Cl₂, kanye ne-silane derivatives) ngenkathi bumelana nokujikeleza okuphindaphindiwe kokushisa ngaphandle kokuwohloka kwesakhiwo. Lokhu kunciphisa kakhulu ukukhiqizwa kwezinhlayiya futhi kuthuthukisa isikhathi sokusebenza kwemishini iyonke.
Ukuphathwa kokushisa kumele omunye umsebenzi obalulekile we-CVD SiC Coating Baffles ngaphakathi kwezinhlelo ze-epitaxial. Ukushisa okuphezulu kwe-CVD silicon carbide kanye ne-coefficient ephansi yokwanda kokushisa (CTE) kwenza kube lula ukusatshalaliswa kokushisa okufanayo ngaphakathi kwegumbi. Ngesikhathi sezinqubo zokukhula kokushisa okuphezulu, ama-baffles asebenza njengeziqinisi zokushisa, anciphise amazinga okushisa asendaweni angabangela ukwehluka kwamazinga okukhula noma ukufakwa kwama-dopant.
I-Semixlab isebenzisa amazinga okulawula ikhwalithi aqinile kulo lonke ukukhethwa kwezinto, ukufakwa kwe-CVD coating, ukunemba komshini wokugaya, kanye nokuhlolwa kokugcina ukuqinisekisa ukujiya kwe-coating okuhambisanayo, ukunamathela, ubumsulwa, kanye nokuqina kobukhulu. I-Semixlab isalokhu izibophezele ekuhlinzekeni ukwesekwa kobuchwepheshe okuthuthukisiwe kanye nezixazululo zomkhiqizo ezenziwe ngokwezifiso zezinqubo ze-semiconductor epitaxial. Silangazelela ngobuqotho ukuba ngumlingani wakho wesikhathi eside eShayina.
Imininingwane
| Izakhiwo ezibonakalayo eziyisisekelo ze-CVD SiC coating | |
| Property | Value ejwayelekile |
| Isakhiwo Sekristalu | I-FCC β isigaba se-polycrystalline, ikakhulukazi (111) eqondiswe |
| Ubuningi | 3.21 g / cm³ |
| ubulukhuni | 2500 Vickers ubulukhuni (500g umthwalo) |
| Ubukhulu Bokusanhlamvu | 2 ~ 10μm |
| I-Chemical Purity | 99.99995% |
| Amandla Okushisa | 640 J·kg-1·K-1 |
| I-Sublimation Temperature | 2700 ℃ |
| Amandla weFlexural | 415 MPa RT 4-iphoyinti |
| I-Modulus Encane | 430 Gpa 4pt ukugoba, 1300℃ |
| I-Thermal Conductivity | 300W·m-1·K-1 |
| Ukunwetshwa kwe-Thermal(CTE) | 4.5 × 10-6K-1 |
Imisebenzi Yethu
Semixlab Product Shop
