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I-SiC coated wafer susceptor
Imininingwane Quick:
Inhloso: Idizayinelwe ngokuqondile i-semiconductor CVD (1000°C - 1400°C) kanye nezinqubo ze-PVD zezinga lokushisa eliphezulu, inikeza inkundla yokusekelwa ezinzile yama-wafers.
Amapharamitha angumongo: Ubulukhuni bobuso Ra <0.5 μm;ukuqina okuphezulu (>2500 HV); i-coefficient of thermal expansion (CTE) ifaniswe ngokunembile (≈ 2.6 x 10⁻⁶/K), iqeda ngokuphelele i-wafer warpage noma ukushelela okubangelwa ukucindezeleka okushisayo.
Incazelo
I-Semixlab inikeza i-wafer susceptor esebenza kahle kakhulu. Lo mkhiqizo usetshenziswa kakhulu kumishini ye-semiconductor CVD PVD ukuze unikeze ukwesekwa kwama-wafers futhi uvimbele noma yimuphi umonakalo kanye namaconsi ngengozi okubangelwa ukugeleza kwe-nitrogen.
I-SiC Coated silicon carbide base (i-SiC coated Susceptor) isetshenziswa kakhulu kuma-semiconductors ngenxa yezici zayo ezifana nokumelana nezinga lokushisa eliphezulu, ukumelana nokugqwala, ukuhlanzeka okuphezulu kanye nokungcoliswa okuncane kwama-wafers.
Isicelo:
Idizayinelwe ngokuqondile i-semiconductor CVD (1000°C - 1400°C) kanye nezinqubo ze-PVD zezinga lokushisa eliphezulu, inikeza inkundla yokusekelwa ezinzile yama-wafers.
Izici Core:
Ukuqina okuvelele kwezinga lokushisa eliphezulu: Imelana nezinga lokushisa elidlulele ngaphezu kuka-1400°C, iqinisekisa ukuma kwe-wafer okunembile ngaphandle kokuchezuka.
Isivikelo esiqine kakhulu: Melana ngokuphumelelayo nomthelela wokugeleza kwe-nitrogen >10 m/s namaconsi ngephutha, okuhlinzeka ngokuvikeleka okuphezulu kwewafa.
Ukuqina okuvelele: I-SiC coating inikeza ubulukhuni obuphezulu (>2500 HV) nokumelana nokugqwala, kunweba impilo yesevisi.
Indawo ehlanzekile kakhulu: Ubulukhuni bobuso Ra <0.5 μm, kunciphisa ingozi yokungcoliswa kwezinhlayiyana.
Isisekelo se-silicon (i-silicon Susceptor)
Isicelo: Ifanele izinqubo zokushisa okuphezulu kwamawafa e-silicon anezidingo eziphezulu kakhulu zokufanisa okushisayo (njengokukhula kwe-epitaxial, <1200°C).
Izici Core:
● Ukufanisa okushisayo okuphelele: Ngokuhambisana nokokusebenza kwe-wafer (i-silicon ye-monocrystalline), i-coefficient of thermal expansion (CTE) ifaniswe ngokunembile (≈ 2.6 x 10⁻⁶/K), isusa ngokuphelele i-wafer warpage noma ukushelela okubangelwa ukucindezeleka okushisayo.
● Ukulethwa okusheshayo: Umjikelezo wokulethwa kwemikhiqizo ejwayelekile ufinyezwa ngokuphawulekayo, kuze kube ngamaviki angu-4-6 (uma kuqhathaniswa namaviki angu-8-12 ezisekelo ze-SiC).
● Ukuhlanzeka okuphezulu: Ihlangabezana nezindinganiso zezinto ze-silicon zebanga le-semiconductor.
● Ikhwalithi yobuso: Ipholishwe kahle, ubulukhuni obungaphezulu kwe-Ra <0.2 μm.
Imininingwane
| Izakhiwo ezibonakalayo eziyisisekelo ze-CVD SiC coating | |
| Property | Value ejwayelekile |
| Isakhiwo Sekristalu | I-FCC β isigaba se-polycrystalline, ikakhulukazi (111) eqondiswe |
| Ubuningi | 3.21 g / cm³ |
| ubulukhuni | 2500 Vickers ubulukhuni (500g umthwalo) |
| Ubukhulu Bokusanhlamvu | 2 ~ 10μm |
| I-Chemical Purity | 99.99995% |
| Amandla Okushisa | 640 J·kg-1·K-1 |
| I-Sublimation Temperature | 2700 ℃ |
| Amandla weFlexural | 415 MPa RT 4-iphoyinti |
| Encane Modulus | 430 Gpa 4pt ukugoba, 1300℃ |
| I-Thermal Conductivity | 300W·m-1·K-1 |
| Ukunwetshwa kwe-Thermal(CTE) | 4.5 × 10-6K-1 |
Izicelo
I-SiC epitaxial layer ukukhula kwe-graphite susceptor.
I-Gas inlet diversion kanye nokulawula insimu eshisayo ku-SiC epitaxial growth furnace.
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