Indandatho ye-TaC enembobo

I-Silicon carbide (SiC), impahla ye-semiconductor yesizukulwane sesithathu, inezakhiwo ezivelele njenge-bandgap ephezulu, ukuqhutshwa kokushisa okuphezulu, kanye nenkundla kagesi ewohlokayo, okuyenza ibaluleke emikhakheni efana nezimoto zamandla amasha, ezokuthutha ngojantshi, ukuxhumana kwe-5G, namandla kagesi. Ukukhula kwamakristalu e-SiC eyodwa kudinga izinga lokushisa eliphezulu kakhulu (>2000°C) kanye nezindawo ezinokhahlo ezingokwenyama nezamakhemikhali, okubeka izimfuno eziphakeme kakhulu ezingxenyeni ezibalulekile zemishini yokukhula, njengezinsimbi kanye nezingxenye zensimu eshisayo. I-Semixlab inikeza izindandatho ze-Porous tantalum carbide (TaC), ezinezakhiwo zayo ezihlukile zomzimba namakhemikhali, seziyinto efanelekile yokuthuthukisa inqubo yokukhula yamakristalu e-SiC eyodwa.

Izici eziyinhloko zamasongo e-tantalum carbide

1. Ukuqina kwezinga lokushisa eliphezulu

Iphoyinti lokuncibilika le-Tantalum carbide lifika ku-3880 ℃, ku-silicon carbide ibanga lokushisa elilodwa lekristalu lokukhula (2000-2500℃) ukuze kugcinwe ukuqina kwesakhiwo, ukugwema ukuwohloka noma ukuguquguquka.

I-coefficient yokwandisa okushisayo ephansi (6.3×10⁻⁶/K), inciphisa ingcuphe yokuqhekeka okubangelwa ukucindezeleka kokushisa.

2. Ukungabi namandla kwamakhemikhali

Inokuhambisana okuqinile ne-silicon carbide, i-graphite nezinye izinto, futhi ayiphenduli nge-silicon (Si) ne-carbon (C) umhwamuko ekushiseni okuphezulu ukuze kugwenywe amakristalu angcolisayo.Ukumelana nokugqwala okuhle kakhulu kumagesi e-silicon/carbon.

Imininingwane Quick:

1. Amanye amagama: Indandatho ye-TaC enembobo, I-Porous Tantalum carbide, indandatho eboshwe nge-TaC

2. Isicelo: Njengengxenye eyinhloko yesistimu yensimu eshisayo, indandatho ye-TaC enezimbotshana ilawula ukusatshalaliswa kwemisebe yokushisa ngesakhiwo sayo esinezimbotshana, inciphisa izinga lokushisa le-radial, futhi ithuthukise ukufana kokukhula kwe-axial kwe-silicon carbide ikristalu eyodwa.Kuhlanganiswe ne-graphite heater, ukukhubazeka kwe-crystal yokucindezeleka okubangelwa ukushisa okweqile kwendawo kungancishiswa.

3. Amapharamitha angumongo:Iphoyinti elincibilikayo le-Tantalum carbide lifika ku-3880℃, ebangeni lezinga lokushisa le-silicon carbide lokukhula kwekristalu elilodwa (2000-2500℃) ukuze kugcinwe ukuzinza kwesakhiwo, ukugwema ukuwohloka noma ukuguquguquka.

I-coefficient yokwandisa okushisayo ephansi (6.3×10⁻⁶/K), inciphisa ingcuphe yokuqhekeka okubangelwa ukucindezeleka kokushisa.

Isicelo esibalulekile ekukhuleni kwe-silicon carbide single crystal

1. Idizayini ye-thermal field kanye nokulawula izinga lokushisa

Njengengxenye ewumnyombo yohlelo lwensimu eshisayo, indandatho ye-TaC enezimbotshana ilawula ukusatshalaliswa kwemisebe yokushisa ngesakhiwo sayo esinezimbotshana, yehlisa izinga lokushisa le-radial, futhi ithuthukisa ukufana kokukhula kwe-axial kwekristalu.

Kuhlanganiswe ne-heater ye-graphite, ukukhubazeka kwe-crystal stress okubangelwa ukushisa kwendawo kungancishiswa.

2. Ukuthuthwa kwegesi kanye nokwenza kahle kokusabela

Esithandweni sokukhula se-PVT, izindandatho ze-TaC ezinezimbobo zingasetshenziswa njengendawo yokusabalalisa igesi ukuze kusatshalaliswe ngokulinganayo umhwamuko we-Si/C endaweni yekristalu yembewu, engathuthukisa izinga lokukhula kwekristalu nekhwalithi yekristalu.

Isakhiwo sezimbotshana singakhangisa ukungcola (okufana nama-ion ensimbi) futhi sithuthukise ukuhlanzeka kwekristalu (ukumelana >10⁵ Ω·cm).

3. Umhlangano wokusekela impilo ende

Esikhundleni sezinto zendabuko ze-graphite, isetshenziselwa izindandatho zokusekela i-crucible noma izendlalelo zokushisa ukushisa ukuze ugweme inkinga ye-graphite powder emazingeni okushisa aphezulu futhi andise impilo yesevisi yemishini (> amahora angu-1000).

Isakhiwo se-porous sikhulula ukugxila kokucindezeleka okushisayo futhi kunciphisa ingozi yokuqhekeka.

Iringi ye-TaC isetshenziswa kakhulu endleleni ye-PVT

Kafushane, i-Porous TaC Ring ye-Semixlab ithuthukisa ikhwalithi yekristalu: inkambu eshisayo efanayo inciphisa ukuminyana kwesici futhi isekela ukulungiswa kosayizi omkhulu wamakristalu e-SiC angama-intshi angu-6 nangaphezulu.

Ukusebenza kahle kwenqubo: Sheshisa ukusebenza kahle kokudluliswa kwegesi futhi ukhuphule izinga lokukhula ngo-10-15%.

Yehlisa izindleko zokukhiqiza: Izingxenye zesikhathi eside zinciphisa imvamisa yokugcinwa kwemishini, futhi izindleko zizonke zehliswa ngo-20-30%.

Izinzuzo zesakhiwo se-porous

I-porosity elawulekayo (30-60%) ilungiselela indlela yokusabalalisa igesi futhi ikhuthaze ukuthuthwa komhwamuko ofanayo we-Si/C ku-PVT (indlela yokuthutha umhwamuko obonakalayo).

Indawo ethize ephezulu ithuthukisa ukusebenza kahle kwemisebe eshisayo, isiza ukwakha inkambu yokushisa efanayo, futhi ivimbele ukukhubazeka kwekristalu (njengama-microtubules kanye nokususwa).