I-SiC Coated Graphite Susceptor
I-Semixlab's SiC coated graphite susceptors yizici ezisebenza kahle kakhulu eziklanyelwe izinqubo ezisezingeni eliphezulu ezifana ne-semiconductor epitaxial deposition kanye ne-MOCVD. Basebenzisa i-high-purity graphite substrate embozwe ungqimba oluminyene, lwekhemikhali inert silicon carbide (SiC) ngenqubo ye-CVD. Lawa ma-susceptors anikeza ukufana okuhle kakhulu kokushisa, avimbele ngempumelelo ukungcola kwezinhlayiyana, futhi athuthukise kakhulu ukuqina kwengxenye. Ukukhetha ama-susceptors ethu kungakusiza uthuthukise isivuno senqubo futhi wehlise izindleko zokulungisa. Sibheke ngabomvu ukuzwa kuwe.
Incazelo
I-SiC (Silicon Carbide) ehlanganiswe nge-graphite susceptor iyingxenye ebalulekile yokukhiqiza i-semiconductor, ikakhulukazi ekufuneni izicelo ezisezingeni lokushisa eliphezulu njenge-epitaxial deposition kanye ne-MOCVD (Metal-Organic Chemical Vapor Deposition).
Lawa ma-susceptors aklanyelwe ukubamba futhi ashise amawafa e-silicon anembayo, aqinisekisa ukusatshalaliswa kwezinga lokushisa okufanayo kanye nemvelo yenqubo ehlanzekile. Ama-susceptors ethu abalulekile ekukhiqizeni amafilimu amancane asezingeni eliphezulu, afanayo ayisisekelo samadivayisi athembekile futhi asebenza kahle kakhulu e-semiconductor.
Ⅰ. Izinto Ezibalulekile Nezakhi Ezimqoka
Ama-susceptors ethu akhiwe ngobuchule kusetshenziswa i-high pure graphite core kanye nongqimba oluvikelayo lwe-Silicon Carbide (SiC).
I-High-Purity Graphite: I-graphite substrate inikeza ubuqotho besakhiwo esiyinhloko kanye nokusebenza okushisayo. Ukuzinza kwayo okuhle kakhulu kokushisa kuyivumela ukuthi isebenze emazingeni okushisa aphakeme kakhulu ngaphandle kokuguqulwa. Ukushisa okuphansi kwe-graphite kwenza ukushisisa nokupholisa okusheshayo nangempumelelo, okubalulekile ezikhathini zomjikelezo osheshayo endaweni yokukhiqiza.
I-Silicon Carbide (SiC) Coating: I-SiC coating isetshenziswa ku-graphite ngenqubo ye-CVD (Chemical Vapor Deposition). Lokhu kudala indawo eminyene, engenazimbotshana eqinile kakhulu futhi engasebenzi ngamakhemikhali. I-SiC inikeza ukumelana okuphezulu nokuguguleka kwe-plasma kanye nokuhlaselwa okuvela kumagesi enqubo anolaka, ukuvimbela ukungcola nokukhiqizwa kwezinhlayiyana. Lokhu kuqinisekisa inqubo ehlanzekile, kwandisa ukuphila kwengxenye, futhi kuvikela i-graphite engaphansi emonakalweni.
Ⅱ. Izinzuzo Ezisebenzayo Ekwenziweni Kwe-Wafer
I-SiC yethu ehlanganiswe ne-graphite susceptors idlala indima ebalulekile ekuqinisekiseni ikhwalithi nokusebenza kahle kokwenziwa kwe-semiconductor.
● I-Thermal Uniformity Engenakuqhathaniswa: Idizayini ye-susceptor, ehlanganiswe nezici ezishisayo ze-SiC ne-graphite, iqinisekisa ukuthi ukushisa kusakazwa ngokulinganayo kuyo yonke indawo eyi-wafer. Lokhu kubalulekile ukuze kuzuzwe ukujiya kwefilimu efanayo kanye nezakhiwo zempahla ezingaguquki, okuwukhiye wokukhiqiza okuphezulu kwedivayisi.
● I-Superior Contamination Control: I-SiC engenazimbobo namakhemikhali angenayo i-SiC ivimbela ukuphuma nokuchithwa kwezinhlayiyana ku-graphite substrate. Lokhu kunciphisa kakhulu ubungozi bokungcoliswa kwe-wafer kanye nokukhubazeka, okuyinselelo evamile ezinqubweni zokushisa okuphezulu.
● Ukuqina Nokuphila Okuthuthukisiwe: Inamathela eqinile ye-SiC isebenza njengesihlangu esivikelayo ezintweni ezilimazayo nezibolayo, enweba ngokuphawulekayo isikhathi sokusebenza kwesixhumi. Lokhu kunciphisa imvamisa yokushintsha futhi kwehlisa izindleko zokulungisa zizonke.
● Ukuphindwa Kwenqubo Ephakeme: Ngokuhlinzeka ngendawo ezinzile futhi engaguquki eshisayo namakhemikhali, ama-susceptors ethu avumela izinqubo eziphindaphindwayo kakhulu. Lokhu kuvumelana kubalulekile ekukhiqizeni ngezinga elikhulu amadivaysi athembekile e-semiconductor.
Kwa-Semixlab, sizibophezele ekuhlinzekeni imboni ye-semiconductor ngezingxenye zeprimiyamu kanye nensizakalo Yokwenza Ngokwezifiso engenakuqhathaniswa. Sinikezela ngedizayini yangokwezifiso ephelele kanye nokukhiqizwa kwama-SiC ethu ahlanganiswe ngama-graphite susceptors. Ithimba lethu lonjiniyela lingasebenzisana nawe ukuze udale i-susceptor efana ngokuphelele nokucaciswa kwemishini yakho kanye nezidingo zenqubo ehlukile.
Imininingwane
| Izakhiwo ezibonakalayo eziyisisekelo ze-CVD SiC coating | |
| Property | Value ejwayelekile |
| Isakhiwo Sekristalu | I-FCC β isigaba se-polycrystalline, ikakhulukazi (111) eqondiswe |
| Ubuningi | 3.21 g / cm³ |
| ubulukhuni | 2500 Vickers ubulukhuni (500g umthwalo) |
| Ubukhulu Bokusanhlamvu | 2 ~ 10μm |
| I-Chemical Purity | 99.99995% |
| Amandla Okushisa | 640 J·kg-1K-1 |
| I-Sublimation Temperature | 2700 ℃ |
| Amandla weFlexural | 415 MPa RT 4-iphoyinti |
| I-Modulus Encane | 430 Gpa 4pt ukugoba, 1300℃ |
| I-Thermal Conductivity | 300Wm-1K-1 |
| Ukunwetshwa kwe-Thermal(CTE) | 4.5 × 10-6K-1 |
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