I-TaC imboze i-graphite enezimbotshana

I-Semixlab's Tantalum Carbide (TaC) Coated Porous Graphite Ring (Tantalum carbide coated porous Graphite Ring) iyisakhi segraphite esebenza kahle kakhulu eklanyelwe ukukhula kwekristalu eyodwa ye-silicon carbide (SiC). Lo mkhiqizo wenziwe nge-high-purity porous graphite substrate futhi umbozwe nge-tantalum carbide (TaC) ekwazi ukumelana nezinga lokushisa eliphezulu futhi imelana nokugqwala ngaphezulu. Ifaka ukumelana nokushaqeka okushisayo okuhle kakhulu, ukuzinza kwamakhemikhali kanye nempilo ende yesevisi, futhi iyisihluthulelo esisebenzisekayo ku-SiC single crystal growth furnace (indlela ye-PVT).

izici yomkhiqizo

1. I-high-purity porous graphite substrate

Ukuhlanzeka okuphezulu kakhulu (≥99.9999%) kwamukelwa i-graphite ye-isostatic, ene-porosity elawulekayo, iqinisekisa ukufana okuhle kokushisayo kanye nokungena kwegesi, nokuthuthukisa indawo yokukhula yamakristalu e-SiC eyodwa.

Okuqukethwe komlotha ophansi nokungcola okuphansi, okunciphisa ingozi yokungcola ngesikhathi senqubo yokukhula kwekristalu.

2. I-Tantalum carbide (TaC) isivikelo sokumboza

Ukufakwa kwe-TaC kuhlanganisa indawo yokuncibilika ephezulu kakhulu (~3880℃) kanye nokungangeni kahle kwamakhemikhali, kuvimbela ngempumelelo i-graphite ukuthi ingasabeli nomhwamuko we-Si/C emazingeni okushisa aphezulu kanye nokunciphisa ukuchithwa kwezinhlayiya zegraphite ukuze zingcolise amakristalu.

I-coating iminyene futhi iyafana, ithuthukisa kakhulu ukumelana ne-oxidation kanye nokumelana nokugqwala kwendandatho yegraphite futhi yandise impilo yayo yesevisi.

3. Ukuzinza okuhle kakhulu kwe-thermal

Ine-coefficient ephansi yokwanda okushisayo kanye nokumelana nokushaqeka okushisayo okuqinile, okuyenza ifanelekele ukukhuphuka nokuwa kwezinga ngokushesha ngesikhathi senqubo yokukhula yamakristalu e-SiC eyodwa (ngaphezu kuka-2000℃).

Ukushisa okuphezulu kwe-thermal kuqinisekisa ukusatshalaliswa kwensimu yokushisa okufanayo futhi kuthuthukisa ikhwalithi yokukhula kwekristalu.

4. Umklamo ngokwezifiso

Ubukhulu bembotshana, i-porosity, ubukhulu bendandatho ye-graphite kanye nobukhulu bokunamathela kwe-TaC kungalungiswa ngokuvumelana nezidingo zamakhasimende ukuze zivumelane nezinhlobo ezahlukene zezithando zokushisa ze-SiC crystal (ezifana nokufudumeza kokungeniswa noma izinhlobo zokushisisa ukumelana).

Imininingwane Quick:

Iziteketiso: I-graphite ene-Porous, i-TaC emboze indandatho ye-graphite ene-porous, indandatho ye-graphite, i-Tantalum carbide enamathela indandatho ye-graphite ene-porous, indandatho ye-graphite ene-porous yokukhula kwekristalu ye-SiC

Inhloso: Qinisekisa ukubekwa okuzinzile kwamafilimu ekhwalithi ephezulu kunqubo ye-PECVD, kuyilapho ukhulisa ukusebenza kahle kokukhiqizwa kwemishini kanye nesivuno samawafa.

Amapharamitha angumongo: I-Porosity: 10% -30%, izinto zokumboza: I-TaC enamathela, ukujiya kwe-coat: 30 ± 5um, izinga lokushisa eliphakeme lesevisi: 2200℃ (indawo enert/vacuum), ubumsulwa ≥99.9999%, i-coefficient yokwanda okushisayo ≤5×10/0⁻≤5×⃶⁶⁻⃁ izinga lokushisa ≤5×10/0⁻0≤5×10/0⁻0⃁ igumbi

amapharamitha Technical

Izimo zohlelo lokusebenza

● Ukukhula kwekristalu eyodwa ye-SiC (indlela ye-PVT) : Njengengxenye ye-crucible noma ingxenye yensimu eshisayo, isetshenziselwa ukufakwa kwe-sublimation kanye nokufakwa kwekristalu kwezinto zokusetshenziswa ze-SiC ezindaweni ezinezinga lokushisa eliphezulu.

● Ukulungiswa kwezinye izinto ze-semiconductor yezinga eliphezulu lokushisa: njengezinqubo zokukhula kwekristalu kuma-semiconductors e-bandgap ebanzi njenge-GaN ne-AlN.

● Impilo ende yesevisi: 

Ukufakwa kwe-TaC kunciphisa kakhulu ukulahleka kwe-graphite, kwehlisa imvamisa yokushintshana futhi konga izindleko.

● Ikhwalithi ephezulu yekristalu: 

Yehlisa ukungcoliswa kwezinhlayiyana futhi uthuthukise ukuhlanzeka nobuqotho bekristalu bekristalu eyodwa ye-SiC.

● Ukunikezwa okuthembekile: 

Isistimu yokulawula ikhwalithi eqinile iqinisekisa ukuvumelana kwenqwaba futhi isekela izimfuno zokukhiqiza ezinkulu.

● Usekelo lwesevisi:

Nikeza ngokubonisana kwezobuchwepheshe, ukuthuthukiswa kwedizayini yenkundla eshisayo kanye nezinsizakalo zokulandelela emva kokuthengisa.

Sekela ukwenza ngokwezifiso okungajwayelekile ukuze uhlangabezane nezidingo ezikhethekile zenqubo.

● Amakhasimende asebenzayo: 

Abakhiqizi be-substrate ye-SiC, abakhiqizi bemishini ye-semiconductor, izikhungo zocwaningo, njll.

Ukuze uthole ulwazi olwengeziwe noma ukuhlolwa kwesampula, sicela usithinte!