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I-Porous Ceramic Vacuum chuck
Imininingwane Quick:
1. Amanye amagama: I-Porous Ceramic Vacuum chuck, i-Porous SiC chuck, i-porous chuck.
2. Isicelo: Idivayisi ye-vacuum adsorption esebenza kahle kakhulu eklanyelwe ukunemba kwe-adsorption nokulungiswa kwama-wafers nama-ingots, afanele ukukhiqizwa kwe-semiconductor, i-wafer cutting, machining enembile, i-epitaxy lokushisa eliphezulu, i-etching, i-ion implantation nezinye izimo.
3. Amapharamitha angumongo:
I-Porosity adjustable (10-200μm).
Izinga lokushisa eliphakeme kakhulu (≤1600°C), ukumelana nokushaqeka okuhle kakhulu.
Ivacuum ye-Adsorption: standard -90kPa (ingenziwa ngendlela oyifisayo ibe ngu-100kPa).
Usayizi wenkomishi yokumunca: Sekela ama-wafers angama-intshi angu-4/6/8/12, usayizi we-ingot ungenziwa ngokwezifiso.
Incazelo
I-Ceramic vacuum chuck iyidivayisi ye-vacuum adsorption esebenza kahle kakhulu eyenzelwe ukunemba kwe-adsorption nokulungiswa kwamawafer nama-ingots. Yamukela isakhiwo esiyinhlanganisela se-porous ceramic + metal yangaphandle indandatho, ehlanganiswe nomklamo owenziwe ngokwezifiso weziteshi zomoya kanye nama-pores ukuze kuzuzwe ukusabalalisa kwamandla okukhangayo okufanayo kanye nokuzinza okuphezulu. Ifanele ukwenziwa kwe-semiconductor, ukusika i-wafer, ukunemba kwemishini nezinye izimo, ukusekela izinga lokushisa eliphezulu, imvelo yokunyakaza kwesivinini esiphezulu, ingahlangabezana nezidingo zokuhambisana zosayizi abahlukahlukene bama-wafers/ingot.
Isevisi ngokwezifiso
Usayizi nokulayisha ngokwezifiso
I-Stomata kanye nokwenza ngcono kwendlela yomoya
Ukujwayela imvelo okukhethekile
Isibonelo sokuklama
Izicelo
Ukwakhiwa kwe-semiconductor
Ukukhula kwe-Epitaxial: Ukukhangisa okuzinzile kwamawafa e-SiC emazingeni okushisa aphezulu ukuze kugwenywe ukulwa nokungcoliswa.
I-Lithography ne-etching: Ukuma okunembile kuplathifomu ehambayo enesivinini esikhulu (ukusheshisa ≤10G) ukuze kuqinisekiswe ukunemba kokuqondanisa kwesithombe.
Ukucutshungulwa kwe-ingot
Ukusika nokugaya: I-Adsorption ye-crystal ingot esindayo (njengesafire, i-silicon carbide ingot) ukucindezela ukuqhekeka onqenqemeni okubangelwa ukudlidliza.
Ucwaningo lwesayensi nobuchwepheshe obukhethekile
Ukushisa okuphezulu kwe-annealing: izinkomishi zokumunca ezinezimbobo ze-silicon carbide zisebenza isikhathi eside ku-1600°C, ngaphandle kokuguquka nokukhipha umoya ongcolile.
I-vacuum coating: Idizayini ephezulu yokuqina komoya, ehambisana nemvelo ye-PVD/CVD cavity.
Competitive Advantage
Isakhiwo esiyinhloko kanye nezinzuzo zezinto ezibonakalayo
1.Idizayini eyinhlanganisela yeMultilayer
Ungqimba olungaphezulu: I-ceramic enezimbotshana (ongazikhethela i-silicon carbide noma i-porous graphite), imbobo elungisekayo (10-200μm) ukuze kuqinisekiswe ukudluliswa okufanayo kwamandla e-adsorption endaweni eyilucwecwana ukuze kugwenywe ukugxiliswa kwengcindezi yendawo.
I-Matrix: Uhlaka lwensimbi oluqinile oluphakeme (insimbi engagqwali noma ingxubevange ye-aluminium) ukuze kuhlinzekwe ukwesekwa kwesakhiwo kanye nokuqina komoya.
Umzila womoya nezimbotshana: Inethiwekhi yangaphakathi yemigudu yomoya ecushwe ngokunembile kanye nama-micropores asabalaliswe ngokulinganayo asekela ukumuncwa kwe-vacuum ngokushesha (amandla e-adsorption afika ku- -90kPa) kanye nokukhululwa ngokushesha.
2. Ukuqhathaniswa kwezinto ezibonakalayo
| Material | I-silicon carbide enezimbotshana | I-graphite enezimbotshana |
| Ukumelana Nokushisa | Izinga lokushisa eliphakeme kakhulu (≤1600°C), ukumelana nokushaqeka okuhle kakhulu | Izinga lokushisa eliphakathi nendawo (≤800°C), ukuqhutshwa kwe-thermal okungcono |
| Ukuqina kwamakhemikhali | Ukumelana nokugqwala kwe-Acid ne-alkali, ukumelana nokugqwala kwe-plasma | Imelana namagesi anga-oxidizing, izindleko eziphansi |
| Isigcawu esisebenzayo | I-epitaxy yokushisa ephezulu, i-etching, i-ion implantation | I-wafer cutting, ukugaya, ukupakisha |
3. Ukusebenza okubalulekile kanye nemingcele yezobuchwepheshe
| Incazelo | esasizizwa |
| Usayizi we-Chuck | Ukusekela ama-4/6/8/12 ama-intshi ama-wafers, usayizi we-ingot ungenziwa ngokwezifiso |
| Iyalayisha | Ipuleti elilodwa lomthwalo omkhulu 50kg (ubude ≤300mm) |
| Temperature Ukusebenza | I-silicon carbide enezimbotshana: -50 ° C ~ 1600 ° C; I-graphite enezimbotshana: -50°C~800°C |
| I-vacuum ye-Adsorption | Okujwayelekile -90kPa (kuyengezwa ngokwezifiso ukuya ku-100kPa) |
Imibuzo Evame Ukubuzwa
Q: Ungakhetha kanjani i-silicon carbide ene-porous kanye ne-porous graphite chuck? Yimuphi umehluko omkhulu phakathi kwe-porous silicon carbide ne-porous graphite chuck ezinqubweni zokushisa okuphezulu? Ungakhetha kanjani impahla efanele yesimo sohlelo lokusebenza?
A: I-Porous silicon carbide chuck:
Ukumelana nezinga lokushisa: kungasebenza ngokuzinzile emazingeni okushisa aphakeme ngokwedlulele ≤1600°C (njenge-SiC epitaxy, izinga lokushisa eliphezulu annealing), ukumelana nokushaqeka okuhle kakhulu okushisayo, kulungele indawo yesehlakalo sokushintshashintsha kwezinga lokushisa okukhulu.
Ukumelana nokugqwala: ukumelana ne-asidi eqinile, ukuguguleka kwe-alkali kanye ne-plasma, kulungele ukucwiliswa, ukufakwa kwe-ion kanye nenye inqubo yegesi egqwalayo.
I-Porous graphite Chuck:
I-Thermal conductivity: I-Thermal conductivity ephakeme (200-400 W/m·K), ifanele izimo ezidinga ukudluliswa kokushisa okusheshayo (okufana nokukhipha ukushisa okuyisilucwecwana).
Umnotho: Izindleko eziphansi, ezifanele ≤800 ° C imvelo yokushisa ephakathi nendawo (efana nokupakisha, ukugaya).
Iziphakamiso zokukhetha:
Uma izinga lokushisa lenqubo li> 800 ° C noma ukumelana nokugqwala kuyadingeka, i-porous silicon carbide ikhethwa; Uma ukuphishekela engabizi futhi low inqubo lokushisa, ungakhetha graphite ezimbotshana.
