Silicon Carbide esithandweni somlilo

I-Semixlab inikeza i-Ultra-high purity SiC furnace system, izixazululo zensimu eshisayo ye-semiconductor-grade enobumsulwa be-coating engu-99.9999% kanye nokulethwa okuphelele komugqa.

Isiphakamiso senani elibalulekile

Nikeza ngendawo eshisayo engangcoliswanga ngokuphelele yokwenziwa kwe-wafer: 99.9% ukuhlanzeka kwe-SiC kwe-substrate + 99.9999% ukuhlanzeka kwe-CVD enamathelayo, kuhlanganiswe nesistimu ephelele ye-SiC cantilever paddle & wafer boat system, ukuze kuzuzwe ukungcola okuyiziro zensimbi ekamelweni lenqubo.

Amagama ahlukene emikhiqizo:

Izinga lokushisa eliphezulu leshubhu leSiC somlilo;ishubhu le-silicon carbide;Ishubhu ye-SiC emsulwa;Ishubhu le-Silicon carbide lesithando sokusabalalisa;Ishubhu ye-silicon carbide yokusabalalisa &inqubo ye-LPCVD;Ishubhu ye-SiC ye-RTP,ishubhu ye-SiC yokukhipha i-oxidation

Imininingwane ebalulekile:

Ubumsulwa bezinto ezibonakalayo: I-base material i-silicon carbide enobumsulwa obungaphezu kuka-99.9%, futhi ubumsulwa ngemva kokumbozwa kwe-CVD bungaphezu kuka-99.9999% (ibanga le-6N).

Ukusebenza okushisayo: Izinga lokushisa eliphezulu lokusebenza 1650℃ (isikhathi eside), i-coefficient yokunweba okushisayo: 4.6×10⁻⁶/℃, ukufana endaweni yokushisa engashintshi: ±1.5℃ (1200℃);

Amandla omshini: Amandla okugoba 450Mpa(ezinga lokushisa legumbi).

Ukusetshenziswa okuyinhloko

Inkampani yenethiwekhi eshisayo

Sungula inkambu yokushisa eqinile nefanayo phakathi kwebanga lika-1200℃ ukuya ku-1650℃ (umehluko wezinga lokushisa endaweni yokushisa engashintshi ngu-≤±1.5℃)

Qinisekisa izimo ze-thermodynamic zezinqubo ezifana nokusabalalisa, i-oxidation kanye ne-annealing.

Umgoqo wokuhlukanisa ukungcola

Vimba ukusakazeka kwama-ion ensimbi (afana ne-Fe/Ni/Cu, njll.) ngezinto ezihlanzeke kakhulu (njenge-SiC).

Vimbela ukungcola phakathi kwamagesi enqubo nendawo yangaphandle.

Ishaneli yegesi yokucubungula

Lawula ngokuqondile isiqondiso sokugeleza nokusatshalaliswa kwamagesi asabelayo (afana ne-O₂/N₂/SiH₄, njll.)

Zuza ukusabela okufanayo kwesigaba segesi endaweni eyisicwecwana (efana nokukhula kwe-SiO₂).

I-Photovoltaic coating: Sekela i-TOPCon/HJT cell PECVD inqubo yokuthutha i-wafer.

Izimo zohlelo lokusebenza

● I-Epitaxy

● I-Oxidation/Ukusabalalisa

● Inqubo ye-LPCVD/PECVD

● Ukufakwa kwama-semiconductors ayinhlanganisela ye-III-V

Izixazululo zamaphuzu obuhlungu bezimboni

Izixazululo zethu zibhekana nezinhlungu zamakhasimende ethu:

1. Ukungcoliswa kwezinhlayiyana zenqubo yokushisa okuphezulu: I-6N yokumboza ivimba imvula yokungcola.

Ukushintshwa njalo kwe-SiC ezingxenyeni ze-quartz kukhulisa ukumelana nokugqwala izikhathi eziyi-8.

2. Idizayini engaguquguquki ye-CTE yokungezwani kokwanda kokushisa kwezingxenye zensimu eshisayo kulo lonke uchungechunge lwezinto ze-SiC.

3. Ukwelashwa kwendawo ecwebezelwe kakhulu yokungcoliswa kwensimbi ngemuva kwe-wafer (Ra 0.2μm).

Izinzuzo eziyinhloko zokucaciswa kobuchwepheshe bengxenye:

1. I-SiC furnace tube - Isisekelo sokuhlanzeka kwempahla: 99.9% sintered silicon carbide

▶ Ukumelana nokushaqeka okushisayo kuthuthukiswa izikhathi ezi-3 (ukupholisa ngokushesha> 1600℃)

I-coefficient yokunwetshwa kwe-thermal iphansi njengo-4.6×10⁻⁶/℃

I-Nanoscale coating - CVD deposition ye-6N-grade high-purity SiC (99.9999%)

▶ Ukuvimbela ukusabalalisa kwezinsimbi ezifana ne-Fe ne-Ni

▶ Ubulukhuni bobuso Ra <0.5μm

2. I-SiC wafer Boat - Ihambisana namawafa angama-intshi angu-12

- Idizayini enezingqimba eziningi ezithwala umthwalo

▶ 100% ukufanisa okushisayo namashubhu esithandweni somlilo

Izinga lokungcoliswa kwe-wafer lingaphansi kuka-0.01 ppb

3. I-Cantilever paddle system - isostatic graphite substrate +SiC coating

- Ukuqondanisa okuzenzakalelayo ±0.1mm

▶ Impilo yokumelana ne-creep> izikhathi eziyi-100,000

Ukudlidliza kokudlulisela kungaphansi kuka-5μm

Izithombe ezinhle kakhulu zobuchwepheshe eziphazamisayo

I-Purity Revolution

Uhlelo lokuvikela olunamazinga amabili

Isendlalelo sesisekelo singu-99.9% SiC → ukuze kwakhiwe uhlaka lwamandla aphezulu

I-CVD-SiC yeleveli engu-6N esendlalelo esisebenzayo yenza izinga le-athomu elivalwe kahle
umgoqo

Ukulawula ukungcola: I-Na/K <0.1ppm, izinsimbi ezisindayo <5ppb, ezihlangabezana nezidingo zezinqubo ezingaphansi kuka-28nm

Inzuzo yesistimu ye-synergy

● Ukufana kwenkambu eshisayo: Idizayini yokuhlanganisa eshisayo kathathu yeshubhu lomlilo + isikebhe esilucwecwana + i-paddle blade, umehluko wezinga lokushisa endaweni yokushisa engashintshi (> 1200℃) ngu-≤±1.5℃

● Ukuphindwa kabili kwesikhathi sokuphila: Isixazululo sonke sinweba ubude bempilo ngo-40% uma kuqhathaniswa nesistimu ehlanganisiwe, i-MTBA idlula amahora angu-8,000