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I-SiC yokugqoka i-Graphite Barrel Suceptor
Imininingwane Quick:
1. Amanye amagama: I-Epitaxial furnace graphite barrel, i-SiC coated wafer tray, uhlobo lombhobho we-wafer susceptor, i-graphite susceptor
2. Isicelo: Ngenqubo yokukhula ye-wafer epitaxial
3. Amapharamitha angumongo: I-homogeneity yenkundla yokugeleza kwegesi kanye nenkambu eshisayo egumbini lokusabela ingenziwa kahle ngokusebenzisa i-isostatic pressure high purity graphite matrix kuhlanganiswe nobuchwepheshe bokufaka umhwamuko wamakhemikhali (CVD) we-SiC wokumboza okumelana nezinga lokushisa elingu-1600℃, ukuguquguquka okushisayo okungu-300W/m·5 nokukhubazeka okungu-9≥9 nokukhubazeka kuka-9%. ungqimba epitaxial kungaba
kuncishiswe kakhulu.
Incazelo
I-SiC coating Graphite Wafer Epitaxy Barrel Suceptor iwumgogodla wemishini yokukhula ye-Si epitaxial, futhi idizayini yayo ihlanganisa ukuguquguquka okuphezulu okushisayo kwegraphite nokumelana nokugqwala okwedlulele kwezingubo ze-SiC. I-substrate iwukuhlanzeka okuphezulu kwe-Sigley graphite (ukuhlanzeka ≥99.9995%) okwenziwe inqubo yokucindezela isostatic. I-50μm eminyene ye-β-SiC enamathelayo yafakwa phezu kwenqubo ye-CVD. Ivimbela ngempumelelo ukukhishwa kokungcola kwe-graphite matrix ekushiseni okuphezulu (1200-1800 ℃) namagesi anolaka (afana ne-SiH4, C3H8, kanye H2), ukugwema ukungcoliswa kwe-wafer. Idizayini yomphongolo (yemishini eyi-intshi engu-4/6/8) Ngokulungiselela indlela yokugeleza komoya kanye nokusabalalisa kwenkundla eshisayo, ukujiya okufanayo kwesendlalelo se-epitaxial kulawulwa ngaphakathi ku-±1.5%, futhi ukuminyana kwesici kwehliselwa ku-<0.05cm-2. Ngaphezu kwalokho, i-coefficient yokwandisa okushisayo ye-SiC coating kanye ne-graphite matrix ifaniswe kakhulu (4.5×10).-6/K vs 4.8×10-6/K), ukugwema ukuqhekeka kwe-coating noma ukuchithwa kwezinhlayiyana okubangelwa ukucindezeleka kwezinga lokushisa eliphezulu, nokuqinisekisa ukusebenza okuzinzile kwesikhathi eside kwemishini. Ingxenye isetshenziswe kulayini wokukhiqiza we-wafer epitaxy wabakhiqizi abahamba phambili be-semiconductor e-China, izindleko ze-epitaxy zesithando somlilo esisodwa zehliswe ngo-40%, futhi isivuno sedivayisi sikhuphuke safinyelela ku-98%.
I-susceptor yohlobo lomgqomo uma iqhathaniswa ne-pancake susceptor
| Character | I-Barel Type Susceptor | I-Pancake Susceptor |
| Izinga lokushisa elifanayo | Ukufana okuphansi kancane ngenxa yokugeleza komoya okuqondile kanye nokulinganisa kwemisebe (kudingeka isinxephezelo sezinga lokushisa esiyinkimbinkimbi). | I-symmetry yenkundla eshisayo iphezulu, futhi ukufana kwezinga lokushisa endizeni kungcono. |
| Ukusebenza kahle kokugeleza kwegesi | I-airflow spirals eduze kodonga lomgqomo, futhi ama-wafers asemaphethelweni aqoshwa kalula / afakwe. | Ukugeleza ku-perpendicular endaweni eyi-wafer, futhi ukugeleza nesiqondiso kulawulwa kalula. |
| Amandla nezindleko | Ukukhiqiza okuphezulu, okulungele ukukhiqizwa ngobuningi (inani eliphezulu lama-wafers ngesikhathi seyunithi). | Ukusebenza okuphansi, kulungele ukukhiqizwa kwe-R&D/inqwaba encane. |
| Ubunzima bokulungisa | Isakhiwo siyinkimbinkimbi, futhi ukuhlanzwa nokushintshwa kuthatha isikhathi eside. | Umklamo ovulekile, ukulungiswa okulula. |
Imininingwane
| Izakhiwo ezibonakalayo eziyisisekelo ze-CVD SiC coating | |
| Property | Value ejwayelekile |
| Isakhiwo Sekristalu | I-FCC β isigaba se-polycrystalline, ikakhulukazi (111) eqondiswe |
| Ubuningi | 3.21 g / cm³ |
| ubulukhuni | 2500 Vickers ubulukhuni (500g umthwalo) |
| Ubukhulu Bokusanhlamvu | 2 ~ 10μm |
| I-Chemical Purity | 99.99995% |
| Amandla Okushisa | I-640 J·kg-1·K-1 |
| I-Sublimation Temperature | 2700 ℃ |
| Amandla weFlexural | 415 MPa RT 4-iphoyinti |
| Encane Modulus | 430 Gpa 4pt ukugoba, 1300℃ |
| I-Thermal Conductivity | 300W·m-1·K-1 |
| Ukunwetshwa kwe-Thermal(CTE) | 4.5 × 10-6K-1 |
Izicelo
Isetshenziselwa inqubo ye-silicon epitaxy/CVD.
Iningi elisetshenziswa kumadivayisi wendabuko we-LPE noma we-CVD (njengezinhlelo zakuqala ze-Aixtron).
Competitive Advantage
Ukumelana nemvelo yokugqwala okwedlulele: I-β-SiC yokumboza imelana nokuguguleka kwe-plasma kanye ne-oxidation, futhi ukuphila kwayo kuyinde izikhathi ezingu-5 kune-graphite engavaliwe.
Ukulawulwa kwenkambu yokushisa okunembile: ukwakheka komgqomo kunciphisa ukuxokozela, ukuhanjiswa kwe-thermal kufana ne-substrate, futhi kugwema ukwehluleka kokucindezeleka okushisayo.
Ingozi yokungangcoliki: i-ultra-high purerity substrate kanye nenamathela, ukungcola kwensimbi (Fe, Al) okuqukethwe <0.1ppm.
Isevisi yenqubo yonke: ukusekela ukucutshungulwa kwe-matrix, ukufakwa kwe-coating, ukuhlolwa kokusebenza kokulethwa kokuma okukodwa.
