I-TaC enamayintshi angu-8 ehlanganiswe ne-Graphite Disc Yokukhula kwe-Epitaxial

I-Semixlab 8-inch TaC coated graphite disc iyingxenye ebalulekile eklanyelwe ngokukhethekile ama-SiC epitaxy reactor e-single-wafer avundlile. Ikhiqizwe nge-high-purity graphite substrate futhi imbozwe ngesendlalelo esiminyene se-tantalum carbide (TaC), le diski iletha ukuqina okushisayo okukhethekile, ukumelana nokugqwala, nokucindezelwa kwezinhlayiyana. Idlala indima ebalulekile ekuzuzeni izendlalelo ze-SiC ze-epitaxial ezingenasici, ezihlangabezana nezimfuneko eziqinile zokwenziwa kwedivayisi ye-semiconductor yamandla esizukulwane esilandelayo.

Izindima ku-SiC Epitaxy

Ku-SiC epitaxial reactor ene-wafer eyodwa evundlile evundlile, i-TaC coated graphite disc engu-8 intshi isebenza njengenkundla yokusebenza eyinhloko ethonya ngokuqondile ikhwalithi ye-wafer, ukufana kwe-epitaxial layer, nokuzinza kukonke kwe-reactor. Iqhaza layo lingahlukaniswa libe yizici ezimbalwa ezibalulekile:

1. Ukwesekwa Kwe-wafer & Ukumiswa Okuntanta Igesi

I-disc inikeza isixhumi esibonakalayo esisebenzayo nesishisayo sewafa ye-SiC engu-8-intshi. Ngomshini oklanywe kahle wegesi ontantayo, amagesi okucubungula anjengokugeleza kwe-H₂ phakathi kwediski ne-wafer, okwenza ukumiswa okuzinzile. Lo mklamo ongathinteki unciphisa ukucindezeleka komshini futhi unciphise ukukhiqizwa kwezinhlayiyana ezincane, okuyizici ezibalulekile zamadivayisi we-SiC azwela iphutha.

2. Ukuphathwa Kokushisa kanye Nokusabalalisa Kwezinga Lokushisa Okufanayo

I-SiC epitaxy idinga izinga lokushisa eliphezulu kakhulu lokukhula (1500-1650 °C). I-TaC-coated disc iqinisekisa ngisho nokuqhutshwa kokushisa endaweni eyisicwecwana, icindezela izindawo ezishisayo kanye nemiphumela yokupholisa emaphethelweni. Ngokugcina izinga lokushisa eliqinile (<±1–2 °C), i-disc isekela ukujiya kwe-epitaxial okungaguquki kanye nokufana kwe-doping, okubalulekile kumadivayisi kagesi e-SiC asebenza kahle kakhulu.

3. Ukumelana Kwamakhemikhali Nokuvikelwa Kwe-Graphite

Ngesikhathi se-epitaxy, amagesi agqwalayo afana ne-HCl (i-etching agent) kanye nama-precursors e-hydrocarbon (isb, i-propane, i-silane) yethulwa. I-TaC coating isebenza njengesihlangu esiminyene, esingenamakhemikhali esivikela isisekelo se-graphite. Ngaphandle kwalokhu kunamathela, i-graphite izowohloka kancane kancane, ikhiphe izinhlobo ze-carbon egunjini, okuholela ekuqineni kwendawo, ukungcoliswa, nokulahlekelwa kwesivuno.

4. Ukulawula Ukungcola Nokunciphisa Ukukhubazeka

Ukukhishwa kwekhabhoni ku-graphite engavikelekile kuyingozi enkulu yokungcola ku-SiC epitaxy. Umgoqo we-TaC uvimbela i-carbon sublimation, igcine indawo ye-reactor ihlanzekile. Lokhu kunciphisa ngokuqondile ukukhubazeka kwe-epitaxial njengokonakala kukanxantathu, amaphutha ekustaki, namapayipi amancane, okuqinisekisa ikhwalithi ye-wafer yezinga ledivayisi.

5. Ukuzinza Kwenqubo Nokwethenjelwa Kwesikhathi Eside

I-disc isebenza ngaphansi kokuhamba ngebhayisikili okushisayo okuphindaphindiwe emazingeni okushisa aphezulu kakhulu. Iphoyinti lokuncibilika eliphakeme kakhulu le-TaC (~3880 °C) kanye nokumelana nokushaqeka okuhle kakhulu kwandisa impilo yesevisi uma kuqhathaniswa negraphite engagcotshiwe. Impilo ende yokusebenza isho ukushintshwa kwediski okumbalwa, okuholela ekuphakameni kwesikhathi kwe-reactor kanye nezindleko eziphansi zobunikazi bendwangu ye-semiconductor.

Kwa-Semixlab, sihlinzeka ngezingxenye ze-graphite ezihlanganiswe ngokunemba ze-TaC eziklanyelwe ukusekela ukuthuthukiswa kobuchwepheshe be-SiC epitaxy. Kungakhathaliseki ukuthi ungunjiniyela wezinqubo ofuna isivuno esiphezulu noma uchwepheshe wokuthenga ogxile ekuhlinzekeni okuthembekile, izixazululo zethu ziletha ukusebenza okuqinisekisiwe ezindaweni ezifunwayo ze-semiconductor. Ngibheke phambili ekubonisaneni kwakho okwengeziwe.