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I-graphite enezimbotshana
| Indawo Origin: | China | |
| Igama Brand: | I-Semixlab | |
| Inombolo Model: | PG-001 | |
| Certification: | ISO9001 | |
| Ubuncane Order Ubuningi: | Kuya ngosayizi ngamunye (ukusekelwa kocwaningo nokuthuthukiswa kwama-oda amancane okuhlola ama-batch) | |
| Price: | Ikhwothi ngokuya ngesidingo esenziwe ngokwezifiso (isaphulelo senani elikhulu) | |
| Okufakiwe Yokuxhumana: | Ukupakishwa kwe-anti-oxidation komoya, ibhokisi lepulangwe elingangethuki (ngokuhambisana nezindinganiso zokuthutha zamazwe ngamazwe) | |
| Delivery Isikhathi: | Izinsuku ezingama-20-45 (kuya ngobunkimbinkimbi bokwenza ngokwezifiso) | |
| Inkokhelo Imigomo: | I-T/T (50% kusengaphambili, 50% ikhokhwe ngaphambi kokulethwa) | |
| Supply Amandla: | Umthamo wokukhiqiza wanyanga zonke wezingcezu ezingu-3000, ukusekela ukukhiqizwa okuphuthumayo okuphuthumayo | |
Incazelo
I-Porous graphite isetshenziswa kakhulu ku-PVT (ukudluliswa komhwamuko womzimba) i-silicon carbide (SiC) inqubo yokukhula kwekristalu eyodwa, iyingqikithi yesistimu yensimu yokushisa ephezulu yokushisa. Umkhiqizo wenziwe nge-graphite ecindezelwe ye-ultra-high isostatically, eyakha isakhiwo se-porous esifanayo nesilawulekayo ngokusebenzisa ukunemba kwe-CNC machining kanye nobuchwepheshe bokulawula izimbotshana, okuqinisekisa ukusebenza okuhle kakhulu ngaphansi kwezimo zenqubo ezeqisayo (2200 ℃). Idizayini yayo eyingqayizivele ithuthukisa kakhulu ukufana kwenkundla eshisayo futhi ithuthukise ukusebenza kahle kokudluliselwa kwesigaba segesi, okuyisiqinisekiso esibalulekile sokukhula kwekristalu ye-SiC yekhwalithi ephezulu.
Izici ezibalulekile kanye nezinzuzo zenqubo:
Ukuhlanzeka okukhulu nezinga eliphansi lokukhubazeka
Inqubo ye-vacuum yokuhlanza izinga lokushisa eliphezulu (ukwelashwa okungu-3000℃) isetshenziselwa ukuqhubeka nokunciphisa okuqukethwe kokungcola okungekona okwensimbi okufana komoyampilo ne-nitrogen. Khipha ukungcola okubangelwa ukungcola (okufana nama-microtubules, ukuhlukaniswa) ukuze uqinisekise ukuhambisana kokusebenza kukagesi kwe-SiC single crystals.
Ukuzinza kwezinga lokushisa eliphezulu kakhulu nokulawula insimu eshisayo
Endaweni ye-argon/vacuum, ingakwazi ukumelana nokusebenza okuqhubekayo okungu-2200 ℃ amahora angaphezu kuka-1000, i-coefficient ephansi yokwanda okushisayo, futhi igweme ukuqhekeka kwezinto okubangelwa ukucindezeleka okushisayo.
I-porosity isekela idizayini yokusabalalisa i-gradient, ehlanganiswe nokulingiswa kwe-CFD ukuze kukhuliswe usayizi wembotshana (10-200μm), ilawule ngokunembile ukusatshalaliswa kwensimu eshisayo, inciphise ukushintshashintsha kwezinga lokushisa (ngaphakathi kuka-±3℃), futhi ithuthukise ukufana kokukhula kwekristalu.
Izixazululo ezenziwe ngokwezifiso
Ukuzijwayeza kwejiyomethri: Sekela ukucutshungulwa komumo oyinkimbinkimbi (okufana ne-annular crucible, isihlangu sezendlalelo eziningi), ukufanisa isakhiwo somlilo wamakhasimende.
Ukwelashwa kwendawo: Nikeza izinsiza zokupholisha ezinembe kakhulu noma zokuhlanganisa ukuze kuthuthukiswe ukumelana nokugqwala nempilo yesevisi.
Ukuqinisekiswa kokusebenza kohlelo lokusebenza
Kunqubo ye-PVT SiC crystallization, njengengxenye yensimu ye-crucible ne-thermal:
Khulisa izinga lokukhula kwekristalu ngo-15% -20% (uma kuqhathaniswa negraphite yendabuko);
Isivuno se-wafer sikhuphuke saba ngaphezu kwama-90% (i-crystal eyodwa yama-intshi ama-SiC);
Isikhathi sokulondolozwa kwemishini sinwetshwa sibe yizinyanga eziyisi-6 (izinyanga ezi-3 ezijwayelekile).
Imininingwane Quick:
1. Amanye amagama: I-PVT graphite crucible, ukukhula kwe-silicon carbide ene-porous graphite.
2. Isicelo: Indlela ye-PVT (indlela yokuthutha igesi ebonakalayo) I-SiC single crystal ukukhula okuyinhloko ingxenye yensimu eshisayo.
3. Imingcele eyinhloko: ubumsulwa ≥99.9995%, i-porosity 15-30%, ukumelana nezinga lokushisa 2200℃ (indawo yegesi ye-inert), i-thermal conductivity 100-150 W/m·K.
Imininingwane
| Izakhiwo ezibonakalayo ezijwayelekile ze-porous graphite | |
| ltem | Ipharamitha |
| Ukuxinana kwenqwaba | 0.89 g / cm2 |
| Amandla anamandla | 8.27 MPA |
| Ukusika amandla | 8.27 MPA |
| amandla eqine | 1.72 MPA |
| Ukumelana okuqondile | 130Ω -inx10-5 |
| Ukupha | 50% |
| Usayizi wembotshana omaphakathi | I-70um |
| Ukuqhuba Ukushisa | 12W/M*K |
Izicelo
Umhlangano we-PVT wokukhula kwesithando somlilo: Njengengxenye ye-SiC material sublimation kanye nokukhula kwekristalu, inikeza ukusatshalaliswa kwensimu yokushisa okuzinzile.
Ingxenye yokuvikela insimu eshisayo: isakhiwo se-porous sinciphisa ngempumelelo ukucindezeleka okushisayo futhi sandise impilo yesevisi yemishini.
Ubakaki wekristalu yembewu: amandla aphezulu okusekela ikristalu yembewu, ukuqinisekisa ukukhula okuqondile kwekristalu.
Isendlalelo sokusabalalisa igesi: thuthukisa ukusebenza kahle kokudluliselwa kwesigaba segesi, thuthukisa ikhwalithi yekristalu eyodwa nezinga lokukhula.
Competitive Advantage
Ukusebenza kwezinga lokushisa eliphakeme kakhulu: akukho deformation ethambisayo ku-2200 ℃, esekela amahora angaphezu kuka-1000 wokusebenza okuzinzile okuqhubekayo.
Idizayini yenkambu eshisayo yangokwezifiso: Kuhlanganiswe nokulingiswa kwe-CFD ukuze kuthuthukiswe i-pore gradient, ukuthuthukisa ukufana kwekristalu kanye nesivuno.
Isevisi ye-iteration esheshayo: hlinzeka ngokuhlolwa kwepharamitha yenqubo futhi ulethe isisombululo se-prototype kungakapheli amahora angama-72.
