I-SiC Ceramic Graphite Heater
I-Semixlab SiC Ceramic Graphite Heater iyingxenye yokushisa ephezulu eklanyelwe ukucubungula okuthuthukisiwe kwe-semiconductor. Yakhiwe nge-high-purity graphite core kanye ne-CVD silicon carbide (SiC) evikelayo, le heater iletha ukufana okuvelele okushisayo, ukumelana namakhemikhali, nempilo ende yesevisi. Isetshenziswa kabanzi ku-epitaxy, CVD, annealing, kanye nezinhlelo zokusebenza zokuhlanza ezishisayo, ukuqinisekisa ukushisa okuzinzile nokusebenza kahle ngaphansi kwezimo ezimbi kakhulu. Osayizi ngokwezifiso nokucushwa kuyatholakala ukuze kuhlangatshezwane nezidingo zamagumbi enqubo ahlukahlukene.
Incazelo
I-Semixlab SiC Ceramic Graphite Heater iyisici sokushisisa esisebenza kahle kakhulu esiklanyelwe izindawo ezishisa kakhulu ekukhiqizeni ama-semiconductor. Yakhiwe ngenhlanganisela eqinile ye-silicon carbide (SiC) ye-ceramic coating kanye ne-high-purity graphite, le heater inikeza ukuqhutshwa kokushisa okuphakeme, ukuqina kwamakhemikhali, nokuqina komshini-okuyenza ibe yisixazululo esifanelekile sezinqubo ezishisayo ekwenziweni kwe-wafer.
Ukubunjwa Kwezinto Ezibalulekile kanye Nezakhiwo Zomzimba Ezisemqoka
●Core Material: I-high-density, i-isostatic graphite enezinhlamvu ezinhle
● I-Coating Material: I-Chemical vapor deposited (CVD) i-silicon carbide (SiC)
●Ukuqina Kobuso: ≥ 2500 HV
●I-Thermal Conductivity: ~120–150 W/m·K (umgogodla wegraphite)
● Izinga Lokushisa Lokusebenza: Kufika ku-1500°C endaweni ye-vacuum noma yegesi engasebenzi
●Ukumelana Ne-Oxidation: Kuhle kakhulu ezindaweni ezilawulwayo ngenxa yesendlalelo se-SiC esivikelayo
●I-Electrical Conductivity: Ukumelana okuhambisanayo kokushisisa okufanayo nokusebenza kahle kwamandla
●Ukumelana Nokugqwala: Ukumelana okuphezulu namagesi abolayo namakhemikhali okucubungula (isb, i-HCl, i-HF)
Lo mklamo oyinhlanganisela ukhulisa ukufana okushisayo kwegraphite kanye nokuqina kwamakhemikhali e-SiC, iqinisekisa ukwethembeka kwesikhathi eside ngaphansi kwezimo ezinzima zamabhayisikili ashisayo.
Izicelo
Ukusetshenziswa kwama-heaters e-SiC ceramic graphite
Izifudumezi ze-SiC ceramic graphite zidlala indima engenakushintshwa ezixhumanisini eziningi zezinqubo ezibalulekile zokukhiqiza i-semiconductor, futhi izici zabo zokusebenza okuphezulu zihlobene ngokuqondile nekhwalithi, ukusebenza nokusebenza kahle kokukhiqiza kwamadivayisi we-semiconductor.

1. Ukufakwa kwefilimu ezacile (PVD/CVD/ALD): Ezinqubweni zokukhula kwefilimu ezacile ezifana ne- physical vapor deposition (PVD), chemical vapor deposition (CVD) kanye ne-atomic layer deposition (ALD), izifudumezi ze-ceramic graphite ze-SiC zihlinzeka ngendawo ezinzile nefanayo enezinga eliphezulu lokushisa. Lokhu kubalulekile ekulawuleni izinga lokukhula, ukwakheka kwekristalu, ukufana nokuhlanzeka kwefilimu, futhi kuthinta ngokuqondile izici zikagesi zedivayisi.
2. Ukufakwa kwe-ion: Ngemuva kokufakwa kwe-ion, umonakalo uzokwakheka ngaphakathi kwe-wafer futhi wenze ama-dopants asebenze. Izifudumezi ze-SiC ceramic graphite zisetshenziswa ezinqubweni zokushisa eziphezulu ze-annealing ukusiza ukulungisa umonakalo we-lattice, ukusebenzisa ama-athomu e-doping, nokwandisa ukusatshalaliswa kwe-doping ukuze kuqinisekiswe ukusebenza kukagesi nokuthembeka kwedivayisi.
3. Inqubo yokusabalalisa: Esithandweni sokusabalalisa, izifudumezi ze-SiC ceramic graphite
asetshenziselwa ukuhlinzeka ngamazinga okushisa aphezulu anembe futhi azinzile ukuze kuthuthukiswe ukusatshalaliswa kwama-athomu edoping kusicwecwana se-silicon ukuze kwakhiwe izifunda zohlobo lwe-P noma uhlobo lwe-N, ngaleyo ndlela kwakhiwe isakhiwo samadivayisi ahlukahlukene we-semiconductor.
4. Ukukhula kwe-Epitaxial: Ukukhula kwe-Epitaxial kuyisinyathelo esibalulekile ekukhuleni kwezingqimba ze-semiconductor zekhwalithi ephezulu. Izifudumezi ze-SiC ceramic graphite zinganikeza ukulawula okushisayo okunembile ukuze kuqinisekiswe ukufana kwe-lattice phakathi kwe-epitaxial layer kanye ne-substrate, ukunciphisa amaphutha, futhi kuthuthukise ukufana nokuhlanzeka kongqimba lwe-epitaxial.
5. Ukuhlanza nokomisa ngemva kokucwiliswa: Kwezinye izinyathelo zokuhlanza nokomisa ngemva kokucwiliswa, ukushisisa okufanele kuyadingeka ukuze kusheshiswe ukuhwamuka kwe-solvent noma ukwelashwa kokushisa. Ukumelana nokugqwala nokuhlanzeka okuphezulu kwama-SiC Ceramic graphite heater kukwenza kube ukukhetha okuhle ukugwema ukungcoliswa kwesibili.
6. Ukwelashwa kwe-wafer eshisayo: Ezigabeni ezahlukahlukene zokukhiqiza ama-semiconductor, ama-wafers adinga ukwelashwa okushisayo okuhlukahlukene ukuze kuthuthukiswe izakhiwo zezinto ezibonakalayo, kudambise ingcindezi, noma ukwenza kusebenze izendlalelo ezisebenzayo. Izifudumezi ze-ceramic graphite ze-SiC zihlangabezana nalezi zidingo zokwelashwa ezishisayo eziqinile ngokuphendula kwazo okusheshayo namandla anembile okulawula izinga lokushisa.
I-Semixlab izibophezele ekuhlinzekeni ngemikhiqizo ye-SiC ceramic graphite heater yekhwalithi ephezulu yezinqubo ze-semiconductor ukuze ihlangabezane nezidingo zakho eziyingqayizivele emkhakheni wokukhiqiza i-semiconductor. Ukukhetha i-SiC Ceramic graphite heater yethu kusho ukukhetha isivuno esiphezulu senqubo, umjikelezo omude wokusebenza kwemishini kanye nenqubo yokukhiqiza ezinzile. Sibheke ngabomvu ukuba uzakwethu wesikhathi eside e-China.
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