I-SiC Coated Graphite Holder ye-ICP

Multi-wafer Si epitaxial processing platform

I-Semixlab SiC Coated Graphite Holder ye-ICP yakhelwe ngokuqondile ukushumeka kwe-plasma okuhlanganiswe ngokungenisa kanye nokubekwa. Isebenzisa i-high-purity graphite substrate ehlanganiswe nenqubo yokumboza ye-silicon carbide ukuze inikeze ukumelana nokushisa okuphezulu kakhulu, ukumelana nokugqwala, nokumelana ne-oxidation. Ifanele izindawo zokuhlaziya ezinokhahlo, inwebe ngokuphawulekayo impilo yengxenye futhi inciphise izindleko zokuyilungisa. Ngesikhathi esifanayo, siqinisekisa ukulawulwa kwekhwalithi okuqinile, izinsizakalo ezenziwe ngokwezifiso, nokulethwa okusheshayo.

Isicelo:

I-SiC coated graphite holder iyingxenye ebalulekile ku-semiconductor inductively coupled plasma (ICP) etching kanye nezinqubo zokubeka ngenxa yokuhlanzeka kwayo okuphezulu, ukumelana nokushisa okuphezulu kanye nokumelana nokuguguleka kwe-plasma okuhle kakhulu.

Amasevisi anganikezwa:

Ukuhlaziywa kwesimo sohlelo lwekhasimende, izinto ezifanayo, ukuxazulula izinkinga zobuchwepheshe.

Iphrofayela Yenkampani:

I-Semixlab inamalabhorethri angu-2, ithimba lochwepheshe abaneminyaka engu-20 yokuhlangenwe nakho okubalulekile, abane-R&D kanye nokukhiqiza, amakhono okuhlola nokuqinisekisa.

Amapharamitha Technical

Izinkambu zohlelo lokusebenza eziyinhloko

Ukuqinisekiswa kochungechunge lwezemvelo

I-Semixlab SiC Coated Graphite Holder yokuqinisekisa iketango le-ICP ihlanganisa izinto ezingavuthiwe ekukhiqizeni, isiphumelele ekutholeni isitifiketi esijwayelekile samazwe ngamazwe, futhi inobuchwepheshe obuningi obunelungelo lobunikazi bokuqinisekisa ukwethembeka nokusimama kwayo kumkhakha we-semiconductor kanye nentsha yamandla.

Ukuze uthole ukucaciswa okuningiliziwe kobuchwepheshe, amaphepha amhlophe, noma amalungiselelo okuhlola amasampula, sicela uxhumane nethimba lethu Lokusekela Ubuchwepheshe ukuze uhlole ukuthi i-Semixlab ingathuthukisa kanjani inqubo yakho ukusebenza kahle.

I-Semixlab SiC Coated Graphite Holder yezinzuzo eziyinhloko ze-ICP

Ukumelana nokugqwala okukhulu

Abaphathi be-graphite abahlanganiswe nge-SiC basebenzisa inqubo yokubeka umhwamuko wamakhemikhali ukuze bakhe ungqimba oluqinile oluvikelayo lwe-silicon carbide endaweni yegraphite, lumelana ngempumelelo nokugqwala okuvela kuma-asidi aqinile, izisekelo, nezinyibilikisi zemvelo. Uma kuqhathaniswa nezibambi ze-graphite noma zensimbi ezivamile, lezi zibambi zizinzile uma ziphethe amasampula agqwala kakhulu, zivimbela ukungcoliswa ngenxa yokuwohloka kwempahla. Zifanele ikakhulukazi izicelo ze-ICP ezibandakanya ukuchayeka isikhathi eside kumidiya eyonakalisayo.

Ukuqina kwezinga lokushisa eliphezulu

Endaweni yokushisa ephezulu ye-ICP ye-plasma, i-graphite evamile i-oxidized kalula futhi ikhishwe, kodwa ukugqoka kwe-SiC kuvimbela kakhulu ukusabela phakathi kwe-graphite substrate nomoya-mpilo. Ukumelana kwayo nezinga lokushisa eliphezulu kuqinisekisa ukuthi umbambi ugcina ubuqotho bakhe besakhiwo ngaphansi kwezimo zesikhathi eside zokusebenza kwezinga lokushisa eliphezulu, ukuvimbela ukuwohloka kokusebenza kwensimbi ngenxa yokuwohloka kokushisa noma ukulahlekelwa kwempahla. Ifaneleka ngokukhethekile izidingo zokuhlola eziqhubekayo zamalabhorethri anomphumela ophezulu.

Amandla aphezulu emishini

I-SiC inobulukhuni obuseduze nobo bedayimane, futhi ukunamathela kwayo kuthuthukisa kakhulu ukumelana nokugqokwa kwendawo eqinile. Ku-ICP, okokugqokwa kwe-SiC kunciphisa ukuguga okungaphezulu futhi kunwebe ukunemba kokulingana kwengxenye ebalulekile, ngaleyo ndlela kugcinwe ukusebenza kahle kokudluliselwa kwe-ion nokunciphisa imvamisa yokufaka esikhundleni.

Kuqiza kahle

Uma kuqhathaniswa ne-SiC ehlanzekile noma iplatinum, i-graphite ehlanganiswe ne-SiC igcina ukusebenza okuhle kakhulu kuyilapho yehlisa izindleko ngo-30% -50%. Ukuphila kwayo kuphindwe izikhathi ezingu-3-5 kunezabanikazi be-graphite abavamile, kunciphisa kakhulu isikhathi sokuphumula nezinto ezisetshenziswayo. Kuyisixazululo esingabizi kakhulu, ikakhulukazi kumalabhorethri anesabelomali esilinganiselwe adinga ukusebenza okuzinzile kwesikhathi eside.